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BBY58-05W

Description
18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size112KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BBY58-05W Overview

18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

BBY58-05W Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-70
package instructionR-PDSO-G3
Contacts3
Manufacturer packaging codeSOT323
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW INDUCTANCE
Minimum breakdown voltage10 V
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode Capacitance Tolerance4.89%
Minimum diode capacitance ratio1.15
Nominal diode capacitance18.3 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components2
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage10 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationHYPERABRUPT
Base Number Matches1
BBY58...
Silicon Tuning Diodes
Excellent linearity
High Q hyperabrupt tuning diode
Low series resistance
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For low frequency control elements
such as TCXOs and VCXOs
Very low capacitance spread
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
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Type
BBY58-02L
BBY58-02V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
Package
TSLP-2-1
SC79
SCD80
SOD323
SOT323
SOT323
Configuration
single, leadless
single
single
single
common cathode
common anode
L
S
(nH)
0.4
0.6
0.6
0.6
1.4
1.4
Marking
88
8
88
8 yel.
B5s
B6s
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
1
Pb-containing
Symbol
V
R
I
F
T
op
T
stg
Value
10
20
-55 ... 150
-55 ... 150
Unit
V
mA
°C
package may be available upon special request
1
2007-09-19

BBY58-05W Related Products

BBY58-05W BBY58 BBY58-02L BBY58-02W BBY58-03W BBY58-06W BBY58_07
Description 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Is it lead-free? Lead free - - Lead free Lead free Lead free -
Is it Rohs certified? conform to - conform to conform to conform to conform to -
Parts packaging code SC-70 - DFN - SOD SC-70 -
package instruction R-PDSO-G3 - LEADLESS, TSLP-2 R-PDSO-F2 R-PDSO-G2 R-PDSO-G3 -
Contacts 3 - 2 2 2 3 -
Reach Compliance Code compli - compli compli compli compli -
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 -
Other features LOW INDUCTANCE - - LOW INDUCTANCE LOW INDUCTANCE LOW INDUCTANCE -
Minimum breakdown voltage 10 V - 10 V 10 V 10 V 10 V -
Configuration COMMON CATHODE, 2 ELEMENTS - SINGLE SINGLE SINGLE COMMON ANODE, 2 ELEMENTS -
Diode Capacitance Tolerance 4.89% - 4.89% 4.89% 4.89% 4.89% -
Minimum diode capacitance ratio 1.15 - 1.15 1.15 1.15 1.15 -
Nominal diode capacitance 18.3 pF - 18.3 pF 18.3 pF 18.3 pF 18.3 pF -
Diode component materials SILICON - SILICON SILICON SILICON SILICON -
Diode type VARIABLE CAPACITANCE DIODE - VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE -
JESD-30 code R-PDSO-G3 - R-XBCC-N2 R-PDSO-F2 R-PDSO-G2 R-PDSO-G3 -
Humidity sensitivity level 1 - - 1 1 1 -
Number of components 2 - 1 1 1 2 -
Number of terminals 3 - 2 2 2 3 -
Package body material PLASTIC/EPOXY - UNSPECIFIED PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE - CHIP CARRIER SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified -
Maximum repetitive peak reverse voltage 10 V - 10 V 10 V 10 V 10 V -
surface mount YES - YES YES YES YES -
Terminal form GULL WING - NO LEAD FLAT GULL WING GULL WING -
Terminal location DUAL - BOTTOM DUAL DUAL DUAL -
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Varactor Diode Classification HYPERABRUPT - HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT -
Maker - - Infineon Infineon Infineon Infineon -

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