BBY66-02V datasheet, PDF - EEWORLD Datasheet

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BBY66-02V: Description68.7 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE; CategoryDiscrete semiconductor diode; File Size91KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BBY66-02V Overview

68.7 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

BBY66-02V Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	SC-79
package instruction	R-PDSO-F2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Minimum breakdown voltage	12 V
Configuration	SINGLE
Diode Capacitance Tolerance	4%
Minimum diode capacitance ratio	5
Nominal diode capacitance	68.7 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JESD-30 code	R-PDSO-F2
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Varactor Diode Classification	HYPERABRUPT
Base Number Matches	1

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BBY66...

Silicon Tuning Diodes

•

High capacitance ratio

•

High Q hyperabrupt tuning diode

•

Low series resistance

•

Designed for low tuning voltage operation

for VCO's in mobile communications equipment

•

Very low capacitance spread

•

Pb-free (RoHS compliant) package

•

Qualified according AEC Q101

BBY66-02V

BBY66-05

BBY66-05W

Type

BBY66-02V

BBY66-05

BBY66-05W

Package

SC79

SOT23

SOT323

Configuration

single

common cathode

(nH)

0.6

1.8

1.4

Marking

O1s / O2s**

OBs

**For differences see next page Capacitance groups

Maximum Ratings

= 25°C, unless otherwise specified

Parameter

Diode reverse voltage

Forward current

Operating temperature range

Storage temperature

Pb-containing

Symbol

stg

Value

-55 ... 150

Unit

°C

package may be available upon special request

2007-04-20

BBY66-02V Related Products

	BBY66-02V	BBY 66-05W E6327	BBY66-02V-E6433	BBY66-02V-H6327	BBY6605WH6327XTSA1	BBY6605WE6327HTSA1	BBY 66-02V E6327	BBY66-05W-E6433	BBY66-05-E6433	BBY66-05W-H6327
Description	68.7 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	diode tuning high Q CC sot-323	Variable Capacitance Diode, 68.7pF C(T),	Variable Capacitance Diode, 68.7pF C(T),	PIN Diodes RF DIODES	DIODE TUNING HIGH Q CC SOT-323	DIODE TUNING 12V 50MA SC-79	Variable Capacitance Diode, 68.7pF C(T),	Variable Capacitance Diode, 68.7pF C(T),	Variable Capacitance Diode, 68.7pF C(T),
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	-	-	conform to	conform to	conform to
Maker	Infineon	-	Infineon	Infineon	Infineon	Infineon	-	Infineon	Infineon	Infineon
Reach Compliance Code	compliant	-	compliant	compliant	compliant	compliant	-	compliant	compliant	compli
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99
Nominal diode capacitance	68.7 pF	-	68.7 pF	68.7 pF	68.7 pF	68.7 pF	-	68.7 pF	68.7 pF	68.7 pF
Diode type	VARIABLE CAPACITANCE DIODE	-	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	single	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
surface mount	YES	-	YES	YES	YES	YES	-	YES	YES	YES

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