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BCR162

Description
PNP Silicon Digital Transistor
CategoryDiscrete semiconductor    The transistor   
File Size145KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BCR162 Overview

PNP Silicon Digital Transistor

BCR162 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)20
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
BCR162...
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor
(R
1
= 4.7kΩ ,
R
2
= 4.7kΩ )
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BCR162/F
C
3
R
1
R
2
1
B
2
E
EHA07183
Type
BCR162
BCR162F
1
Pb-containing
Marking
WUs
WUs
1=B
1=B
Pin Configuration
2=E
2=E
2=C
2=C
-
-
-
-
-
-
Package
SOT23
TSFP-3
package may be available upon special request
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR162,
T
S
102°C
BCR162F,
T
S
128°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
200
250
150
-65 ... 150
°C
Value
50
50
30
10
100
mA
mW
Unit
V
1
2007-07-23

BCR162 Related Products

BCR162 BCR162F BCR162_07
Description PNP Silicon Digital Transistor PNP Silicon Digital Transistor PNP Silicon Digital Transistor
Is it Rohs certified? conform to conform to -
Maker Infineon Infineon -
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-F3 -
Contacts 3 3 -
Reach Compliance Code compli compli -
ECCN code EAR99 EAR99 -
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 -
Maximum collector current (IC) 0.1 A 0.1 A -
Collector-emitter maximum voltage 50 V 50 V -
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR -
Minimum DC current gain (hFE) 20 20 -
JESD-30 code R-PDSO-G3 R-PDSO-F3 -
Humidity sensitivity level 1 1 -
Number of components 1 1 -
Number of terminals 3 3 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type PNP PNP -
Certification status Not Qualified Not Qualified -
surface mount YES YES -
Terminal form GULL WING FLAT -
Terminal location DUAL DUAL -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
Nominal transition frequency (fT) 200 MHz 200 MHz -
Base Number Matches 1 1 -
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