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BCR142F

Description
NPN Silicon Digital Transistor
CategoryDiscrete semiconductor    The transistor   
File Size115KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BCR142F Overview

NPN Silicon Digital Transistor

BCR142F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 2.14
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
BCR142...
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
=22kΩ,
R
2
=47kΩ)
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BCR142/W
BCR142F
C
3
R
1
R
2
1
B
2
E
EHA07184
Type
BCR142
BCR142F
BCR142W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR142,
T
S
102°C
BCR142W,
T
S
124°C
BCR142F,
T
S
128°C
Junction temperature
Storage temperature
1
Pb-containing
Marking
WZs
WZs
WZs
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
Package
SOT23
TSFP-3
SOT323
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
Value
50
50
60
10
100
200
250
250
150
-65 ... 150
Unit
V
mA
mW
T
j
T
stg
°C
package may be available upon special request
1
2007-09-17

BCR142F Related Products

BCR142F BCR142 BCR142_07 BCR142W
Description NPN Silicon Digital Transistor NPN Silicon Digital Transistor NPN Silicon Digital Transistor NPN Silicon Digital Transistor
Is it Rohs certified? conform to conform to - conform to
Maker Infineon Infineon - Infineon
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 - 3
Reach Compliance Code unknow compli - compli
ECCN code EAR99 EAR99 - EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 2.14 BUILT-IN BIAS RESISTOR RATIO IS 2.14 - BUILT-IN BIAS RESISTOR RATIO IS 2.14
Maximum collector current (IC) 0.1 A 0.1 A - 0.1 A
Collector-emitter maximum voltage 50 V 50 V - 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 70 70 - 70
JESD-30 code R-PDSO-F3 R-PDSO-G3 - R-PDSO-G3
Humidity sensitivity level 1 1 - 1
Number of components 1 1 - 1
Number of terminals 3 3 - 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type NPN NPN - NPN
Certification status Not Qualified Not Qualified - Not Qualified
surface mount YES YES - YES
Terminal form FLAT GULL WING - GULL WING
Terminal location DUAL DUAL - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING SWITCHING - SWITCHING
Transistor component materials SILICON SILICON - SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz - 150 MHz
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