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BCR189_07

Description
PNP Silicon Digital Transistor
File Size160KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BCR189_07 Overview

PNP Silicon Digital Transistor

BCR189...
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
= 22 kΩ)
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BCR189F
C
3
R
1
1
B
2
E
EHA07180
Type
BCR189F
Marking
W2s
1=B
Pin Configuration
2=E
3=C
-
-
-
Package
TSFP-3
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation
BCR189F,
T
S
128°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
, BCR189F
1
Pb-containing
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
T
j
T
stg
Symbol
R
thJS
Value
50
50
60
5
100
250
150
-65 ... 150
Value
90
Unit
V
mA
mW
°C
Unit
K/W
package may be available upon special request
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-08-03

BCR189_07 Related Products

BCR189_07 BCR189 BCR189F
Description PNP Silicon Digital Transistor PNP Silicon Digital Transistor PNP Silicon Digital Transistor
Is it Rohs certified? - conform to conform to
Maker - Infineon Infineon
package instruction - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-F3
Contacts - 3 3
Reach Compliance Code - unknow compli
ECCN code - EAR99 EAR99
Other features - BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
Maximum collector current (IC) - 0.1 A 0.1 A
Collector-emitter maximum voltage - 50 V 50 V
Configuration - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) - 120 120
JESD-30 code - R-PDSO-G3 R-PDSO-F3
Humidity sensitivity level - 1 1
Number of components - 1 1
Number of terminals - 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - PNP PNP
Maximum power dissipation(Abs) - 0.2 W 0.25 W
Certification status - Not Qualified Not Qualified
surface mount - YES YES
Terminal form - GULL WING FLAT
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
Nominal transition frequency (fT) - 200 MHz 200 MHz

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