BCR35PN
NPN/PNP Silicon Digital Transistor Array
•
Switching circuit, inverter, interface circuit,
driver circuit
•
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
•
Built in bias resistor NPN and PNP
(R
1
=10 kΩ,
R
2
=47 kΩ)
•
Pb-free (ROHS compliant) package
1)
•
Qualified according AEC Q101
TR1
R
2
1
E1
2
B1
3
C2
EHA07176
4
5
6
1
2
3
C1
6
B2
5
E2
4
R
2
R
1
R
1
TR2
Tape loading orientation
Top View
654
W1s
123
Direction of Unreeling
Position in tape: pin 1
opposite of feed hole side
EHA07193
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Type
BCR35PN
Marking
WUs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
for NPN and PNP Types
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
DC collector current
Total power dissipation,
T
S
= 115 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
2)
R
thJS
≤
140
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
T
j
T
stg
Value
50
50
40
6
100
250
150
-65 ... 150
Unit
V
mA
mW
°C
K/W
1Pb-contain package may be available upon special request
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
1
2007-07-24
BCR35PN
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
for NPN and PNP Types
Collector-emitter breakdown voltage
I
C
= 100 µA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Collector cutoff current
V
CB
= 40 V,
I
E
= 0
Emitter cutoff current
V
EB
= 6 V,
I
C
= 0
DC current gain 1)
I
C
= 5 mA,
V
CE
= 5 V
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.5 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on Voltage
I
C
= 2 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
R
1
R
1
/R
2
7
0.19
10
0.21
13
0.24
V
i(on)
0.5
-
1.4
V
i(off)
0.5
-
1
V
CEsat
-
-
0.3
h
FE
70
-
-
I
EBO
-
-
167
I
CBO
-
-
100
V
(BR)CBO
50
-
-
V
(BR)CEO
50
-
-
typ.
max.
Unit
V
nA
µA
-
V
kΩ
-
AC Characteristics
for NPN and PNP Types
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
C
cb
-
2
-
pF
f
T
-
150
-
MHz
1) Pulse test: t < 300
µ
s; D < 2%
2
2007-07-24
BCR35PN
NPN Type
DC Current Gain
h
FE
=
f (I
C
)
V
CE
= 5V (common emitter configuration)
10
3
Collector-Emitter Saturation Voltage
V
CEsat
=
f
(I
C
),
h
FE
= 20
0.5
V
0.4
V
CEsat
h
FE
10
2
0.35
0.3
0.25
0.2
10
1
-40 °C
-25 °C
25 °C
85 °C
125 °C
-40 °C
-25 °C
25 °C
85 °C
125 °C
0.15
0.1
0.05
-2
10
0 -4
10
10
-3
10
A
10
-1
0
-3
10
10
-2
A
10
-1
I
C
I
C
Input on Voltage
V
i(on)
=
f
(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
2
Input off voltage
V
i(off)
=
f
(I
C
)
V
CE
= 5V (common emitter configuration)
10
1
V
V
V
i(off)
V
i(on)
10
1
-40 °C
-25 °C
25 °C
85 °C
125 °C
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
0
10
0
10
-1 -5
10
10
-4
10
-3
10
-2
A
10
-1
10
-1
10
-5
10
-4
10
-3
10
-2
A
10
-1
I
C
I
C
3
2007-07-24
BCR35PN
PNP Type
DC Current Gain
h
FE
=
f (I
C
)
V
CE
= 5V (common emitter configuration)
10
3
Collector-Emitter Saturation Voltage
V
CEsat
=
f
(I
C
),
h
FE
= 20
1
V
0.8
V
CEsat
h
FE
10
2
0.7
0.6
0.5
0.4
10
1
-40 °C
-25 °C
25 °C
85 °C
125 °C
0.3
0.2
0.1
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
0 -4
10
10
-3
10
-2
A
10
-1
0
-3
10
10
-2
A
10
-1
I
C
I
C
Input on Voltage
V
i(on)
=
f
(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
2
Input off voltage
V
i(off)
=
f
(I
C
)
V
CE
= 5V (common emitter configuration)
10
1
V
V
i(off)
V
i(on)
10
1
-40 °C
-25 °C
25 °C
85 °C
125 °C
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
0
10
0
10
-1 -5
10
10
-4
10
-3
10
-2
10
-1
10
-1
10
-5
10
-4
10
-3
10
-2
A
10
-1
I
C
I
C
4
2007-07-24
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
