BCR523...
NPN Silicon Digital Transistors
•
Switching circuit, inverter circuit,
driver circuit
•
Built in bias resistor (R
1
= 1 kΩ,
R
2
= 10 kΩ)
•
BCR523U: Two (galvanic) internal isolated
transistors with good matching in one package
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
BCR523
C
3
BCR523U
C1
6
B2
5
E2
4
R
1
R
1
R
2
TR2
R
1
R
2
TR1
R
2
1
B
2
E
EHA07184
1
E1
2
B1
3
C2
EHA07174
Type
BCR523
BCR523U
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
T
S
≤
79 °C, BCR523
T
S
≤
115 °C , BCR523U
Junction temperature
Storage temperature
Marking
XGs
XGs
1=B
Pin Configuration
2=E
3=C
-
-
-
Package
SOT23
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
Value
50
50
12
5
500
330
330
Unit
V
mA
mW
T
j
T
stg
150
-65 ... 150
°C
1
2011-07-28
BCR523...
Thermal Resistance
Parameter
Junction - soldering point
1)
BCR523
BCR523U
Symbol
R
thJS
Value
≤
215
≤
105
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
50
I
C
= 100 µA,
I
B
= 0
Unit
V
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R
1
R
1
/
R
2
50
-
-
70
-
0.3
0.4
0.7
0.09
-
-
-
-
-
-
-
1
0.1
-
100
0.72
-
0.3
1
1.4
1.3
0.11
k
Ω
-
nA
mA
-
V
Collector-base cutoff current
V
CB
= 50 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 5 V,
I
C
= 0
DC current gain-
I
C
= 50 mA,
V
CE
= 5 V
Collector-emitter saturation voltage
2)
I
C
= 50 mA,
I
B
= 2.5 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on voltage
I
C
= 10 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 100 MHz
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
Pulse
f
T
-
100
-
MHz
test: t < 300µs; D < 2%
2
2011-07-28
BCR523...
DC current gain
h
FE
=
ƒ
(
I
C
)
V
CE
= 5 V (common emitter configuration)
10
3
Collector-emitter saturation voltage
V
CEsat
=
ƒ
(
I
C
),
h
FE
= 20
0.5
V
CEsat
-40 °C
-25 °C
25 °C
85 °C
125 °C
V
0.4
0.35
0.3
0.25
0.2
h
FE
10
2
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
1
0.15
0.1
0.05
10
0 -4
10
-3
-2
-1
0
10
10
10
A
10
0
-3
10
10
-2
10
-1
A
10
0
I
C
I
C
Input on Voltage
V
i
(on)
=
ƒ
(
I
C
)
V
CE
= 0.3V (common emitter configuration)
10
1
Input off voltage
V
i(off)
=
ƒ
(
I
C
)
V
CE
= 5V (common emitter configuration)
10
1
V
V
i(on)
10
0
V
i(off)
-40 °C
-25 °C
25 °C
85 °C
125 °C
V
10
0
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
-1 -4
10
10
-3
10
-2
10
-1
A
10
0
10
-1 -5
10
10
-4
10
-3
A
10
-2
I
C
I
C
3
2011-07-28
BCR523...
Total power dissipation
P
tot
=
ƒ
(
T
S
)
BCR523
400
mW
Total power dissipation
P
tot
=
ƒ
(
T
S
)
BCR523U
400
mW
300
300
P
tot
250
P
tot
120
°C
250
200
200
150
150
100
100
50
50
0
0
20
40
60
80
100
150
0
0
20
40
60
80
100
120
°C
150
T
S
T
S
Permissible Pulse Load
R
thJS
=
ƒ
(
t
p
)
BCR523
10
3
K/W
Permissible Pulse Load
P
totmax
/
P
totDC
=
ƒ
(
t
p
)
BCR523
10
4
-
10
2
P
totmax
/P
totDC
10
3
10
1
10
2
10
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
1
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
4
2011-07-28
BCR523...
Permissible Puls Load
R
thJS
=
ƒ
(
t
p
)
BCR523U
10
3
K/W
Permissible Pulse Load
P
totmax
/
P
totDC
=
ƒ
(
t
p
)
BCR523U
10
3
P
totmax
/P
totDC
10
2
10
2
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
0
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10
1
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
5
2011-07-28
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