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BCR523_07

Description
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size161KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BCR523_07 Overview

500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BCR523_07 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.5000 A
Maximum Collector-Emitter Voltage50 V
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN resistor
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeUniversal small signal
Minimum DC amplification factor70
Rated crossover frequency100 MHz
BCR523...
NPN Silicon Digital Transistors
Switching circuit, inverter circuit,
driver circuit
Built in bias resistor (R
1
= 1 kΩ,
R
2
= 10 kΩ)
BCR523U: Two (galvanic) internal isolated
transistors with good matching in one package
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BCR523
C
3
BCR523U
C1
6
B2
5
E2
4
R
1
R
1
R
2
TR2
R
1
R
2
TR1
R
2
1
B
2
E
EHA07184
1
E1
2
B1
3
C2
EHA07174
Type
BCR523
BCR523U
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
T
S
79 °C, BCR523
T
S
115 °C , BCR523U
Junction temperature
Storage temperature
Marking
XGs
XGs
1=B
Pin Configuration
2=E
3=C
-
-
-
Package
SOT23
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
Value
50
50
12
5
500
330
330
Unit
V
mA
mW
T
j
T
stg
150
-65 ... 150
°C
1
2007-07-24
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