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BFP720

Description
C Heterojunction Wideband RF Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size1MB,26 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BFP720 Overview

C Heterojunction Wideband RF Bipolar Transistor

BFP720 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionEMITTER
Maximum collector current (IC)0.025 A
Collector-emitter maximum voltage4 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
highest frequency bandX BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.08 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON GERMANIUM CARBON
Nominal transition frequency (fT)45000 MHz
Base Number Matches1
BFP720
SiGe:C Heterojunction Wideband RF Bipolar Transistor
Data Sheet
Revision 1.0, 2009-01-20
RF & Protection Devices

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Index Files: 819  2718  209  2086  1932  17  55  5  42  39 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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