BSB015N04NX3 G
OptiMOS
TM
3 Power-MOSFET
Features
• Optimized for high switching frequency DC/DC converter
• Very low on-resistance
R
DS(on)
• Excellent gate charge x
R
DS(on)
product (FOM)
• Low parasitic inductance
• Low profile (<0.7 mm)
• 100% avalanche tested
• 100% Rg Tested
• Double-sided cooling
• Pb-free plating; RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
D
40
1.5
180
V
mΩ
A
MG-WDSON-2
• Compatible with DirectFET® package MX footprint and outline
1)
• Qualified according to JEDEC
2)
for target applications
Type
BSB015N04NX3 G
Package
MG-WDSON-2
Outline
MX
Marking
0204
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=45 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
1)
Value
180
124
35
400
40
290
±20
Unit
A
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=40 A,
R
GS
=25
Ω
mJ
V
CanPAK
TM
uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
2)
3)
4)
J-STD20 and JESD22
See figure 3 for more detailed information
See figure 13 for more detailed information
Rev. 2.0
page 1
2009-05-11
BSB015N04NX3 G
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=45 K/W
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
89
2.8
-40 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
R
thJC
bottom
top
Device on PCB
R
thJA
6 cm
2
cooling area
5)
-
-
-
1.0
-
-
1.4
45
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=40 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=40 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
5)
40
2
-
-
-
0.1
-
4
10
V
µA
-
-
-
0.2
10
10
1.3
0.5
110
100
100
1.5
1.0
-
Ω
S
nA
I
GSS
R
DS(on)
R
G
g
fs
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=30 A
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
55
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.0
page 2
2009-05-11
BSB015N04NX3 G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25 °C
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
-
-
0.81
89
400
-
V
A
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g(sync)
Q
oss
V
DS
=0.1 V,
V
GS
=0 to 10 V
V
DD
=20 V,
V
GS
=0 V
V
DD
=20 V,
I
D
=30 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
-
-
41
26
13
28
107
4.8
101
86
-
-
-
-
142
-
134
-
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20 V,
V
GS
=10 V,
I
D
=30 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=20 V,
f
=1 MHz
-
-
-
-
-
-
-
9000
2300
91
23
6.4
36
7.6
12000 pF
3100
-
-
-
-
-
ns
Values
typ.
max.
Unit
Reverse recovery charge
6)
Q
rr
-
-
50
nC
See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2009-05-11
BSB015N04NX3 G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
100
90
80
70
60
200
160
120
P
tot
[W]
50
40
30
20
10
0
0
40
80
120
160
I
D
[A]
80
40
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
1 µs
10 µs
10
2
100 µs
10
0
0.5
DC
Z
thJC
[K/W]
1 ms
0.2
I
D
[A]
10
1
10 ms
10
-1
0.1
0.05
0.02
10
0
10
-2
0.01
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
-3
10
-6
10
-5
10
-4
10
-3
t
p
[s]
10
-2
10
-1
10
0
V
DS
[V]
Rev. 2.0
page 4
2009-05-11
BSB015N04NX3 G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
800
10 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
6
720
640
560
480
6.5 V
5
7V
5V
4
400
320
6V
R
DS(on)
[m
Ω
]
I
D
[A]
3
5.5 V
240
160
80
0
0
1
2
3
2
7V
6V
6.5 V
10 V
5.5 V
1
5V
0
0
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
800
720
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
280
240
640
560
480
400
320
240
160
80
25 °C
150 °C
200
g
fs
[S]
2
3
4
5
6
7
8
I
D
[A]
160
120
80
40
0
0
0
40
80
120
160
V
GS
[V]
I
D
[A]
Rev. 2.0
page 5
2009-05-11
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