EEPROM, 2KX8, 150ns, Parallel, CMOS, CQCC32
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | IDT (Integrated Device Technology) |
| package instruction | QCCN, LCC32,.45X.55 |
| Reach Compliance Code | not_compliant |
| Maximum access time | 150 ns |
| command user interface | NO |
| Data polling | YES |
| Durability | 10000 Write/Erase Cycles |
| JESD-30 code | R-XQCC-N32 |
| JESD-609 code | e0 |
| memory density | 16384 bit |
| Memory IC Type | EEPROM |
| memory width | 8 |
| Number of terminals | 32 |
| word count | 2048 words |
| character code | 2000 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 2KX8 |
| Package body material | CERAMIC |
| encapsulated code | QCCN |
| Encapsulate equivalent code | LCC32,.45X.55 |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 260 |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | 38535Q/M;38534H;883B |
| Maximum standby current | 0.0009 A |
| Maximum slew rate | 0.125 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | NO LEAD |
| Terminal pitch | 1.27 mm |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | 6 |
| switch bit | NO |
| Maximum write cycle time (tWC) | 10 ms |
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