BSO083N03MS G
OptiMOS
™
3 M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
SW
for High Frequency SMPS
• 100% Avalanche tested
• N-channel
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• Excellent gate charge x
R
DS(on)
product (FOM)
• Qualified for consumer level application
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
30
8.3
10.5
14
A
V
mΩ
PG-DSO-8
Type
BSO083N03MS G
Package
PG-DSO-8
Marking
083N03MS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
10 secs
Continuous drain current
1)
I
D
V
GS
=10 V,
T
A
=25 °C
V
GS
=10 V,
T
A
=90 °C
V
GS
=4.5 V,
T
A
=25 °C
V
GS
=4.5 V,
T
A
=90 °C
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
1)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
I
AS
E
AS
V
GS
P
tot
T
j
,
T
stg
T
A
=25 °C
2.5
T
A
=25 °C
T
A
=25 °C
I
D
=14 A,
R
GS
=25
Ω
14
9.7
12.4
8.6
98
14
35
±20
1.56
-55 ... 150
55/150/56
mJ
V
W
°C
Value
steady state
11
7.6
9.8
6.8
A
Unit
Rev.1.1
page 1
2009-11-19
BSO083N03MS G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
R
thJS
minimal footprint,
t
p
≤10
s
minimal footprint,
steady state
6 cm
2
cooling area
1)
,
t
p
≤10
s
6 cm
2
cooling area
1)
,
steady state
Values
typ.
max.
Unit
-
-
35
K/W
R
thJA
-
-
110
-
-
150
-
-
50
-
-
80
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=16 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=12.4 A
V
GS
=10 V,
I
D
=14 A
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=14 A
30
1
-
-
-
0.1
-
2
10
µA
V
-
-
-
-
0.5
20
10
10
8.4
6.9
1
39
100
100
10.5
8.3
1.8
-
Ω
S
nA
mΩ
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
See figure 3 for more detailed information
See figure 13 for more detailed information
2)
3)
Rev.1.1
page 2
2009-11-19
BSO083N03MS G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
4)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=15 V,
I
D
=14 A,
V
GS
=0 to 10 V
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=14 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
4.5
2.5
2.2
4.2
9.9
2.9
21
-
-
-
-
13
-
27
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=4.5 V,
I
D
=14 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
1600
510
33
9.4
5
11.5
5.4
2100
680
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
8.6
13.4
11.4
18
I
S
I
S,pulse
V
SD
T
A
=25 °C
V
GS
=0 V,
I
F
=14 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
-
-
0.85
3
98
1.1
A
V
Reverse recovery charge
4)
Q
rr
-
-
10
nC
See figure 16 for gate charge parameter definition
Rev.1.1
page 3
2009-11-19
BSO083N03MS G
1 Power dissipation
P
tot
=f(T
A
);
t
p
≤10
s
2 Drain current
I
D
=f(T
A
);
t
p
≤10
s
parameter:
V
GS
3
16
14
2.5
12
2
10
P
tot
[W]
1.5
I
D
[A]
4.5 V
8
10 V
6
1
4
0.5
2
0
0
40
80
120
160
0
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C
2)
;
D
=0
parameter:
t
p
10
2
limited by on-state
resistance
1 µs
10 µs
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
2)
parameter:
D
=t
p
/T
10
2
100 µs
0.5
10
1
1 ms
0.2
10
10 ms
1
0.1
Z
thJA
[K/W]
I
D
[A]
10
0
0.05
100 ms
10 s
0.02
10
0
10
-1
0.01
single pulse
10
-2
10
-1
10
0
10
1
10
2
10
-1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
t
p
[s]
Rev.1.1
page 4
2009-11-19
BSO083N03MS G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
80
10 V
4.5 V
5V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
20
4V
2.8 V
70
16
60
3V
3.2 V
3.5 V
40
R
DS(on)
[m
Ω
]
50
12
4V
3.5 V
I
D
[A]
4.5 V
30
3.2 V
8
5V
10 V
20
3V
4
10
2.8 V
0
0
1
2
3
0
0
5
10
15
20
25
30
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
80
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
60
70
50
60
40
50
40
g
fs
[S]
150 °C
25 °C
I
D
[A]
30
30
20
20
10
10
0
0
1
2
3
4
5
0
0
5
10
15
20
25
30
V
GS
[V]
I
D
[A]
Rev.1.1
page 5
2009-11-19
京公网安备 11010802033920号
EEWORLD
