BSL314PE
OptiMOS™-P 3 Small-Signal-Transistor
Features
• Dual P-channel
• Enhancement mode
• Logic level (4.5V rated)
• ESD protected
• Qualified according AEC Q101
Product Summary
V
DS
R
DS(on),max
V
GS
=-10 V
V
GS
=-4.5 V
I
D
30
140
230
-1.5
PG-TSOP-6
6
5
V
mW
A
• 100% Lead-free; RoHS compliant
• Halogen free according to IEC61249-2-21
1
2
3
4
Type
BSL314PE
Package
PG-TSOP-6
Tape and Reel Information
H6327: 3000 pcs/ reel
Marking
sPT
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
1)
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=-1.5 A,
R
GS
=25
W
I
D
=-1.5 A,
V
DS
=-16 V,
di /dt =-200A/µs,
T
j,max
=150 °C
Value
-1.5
-1.2
-6.1
6
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
2)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±20
0.5
-55 ... 150
1000V to 2000V
260 °C
55/150/56
V
W
°C
°C
°C
Remark: one of both trainsistors in operation.
Rev 2.3
page 1
2013-11-07
BSL314PE
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - ambient
Values
typ.
max.
Unit
R
thJA
minimal footprint
2)
-
-
250
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
V
(BR)DSS
V
GS
= 0V,
I
D
=-250µA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=-6.3µA
V
DS
=-30V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=-30V,
V
GS
=0V,
T
j
=150 °C
-30
-1
-
-
-1.5
-
-
-2
-1
V
mA
-
-
-
-
-
-
153
107
-100
-5
230
140
μA
mW
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=-20V,
V
DS
=0V
V
GS
=-4.5V,
I
D
=-1.2A
V
GS
=-10V,
I
D
=-1.5A
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-1.2 A
3
-
S
Performed on 40mm
2
FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
sides of the PCB.
2)
Rev 2.3
page 2
2013-11-07
BSL314PE
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
GS
=0 V,
I
F
=-1.5A,
T
j
=25 °C
V
R
=-15 V,
I
F
=-1.5A,
di
F
/dt =100 A/µs
-
T
A
=25 °C
-
-
-
-
-
0.8
12.5
4.3
-6.1
1.1
-
-
V
ns
nC
-
-0.5
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=-15 V,
I
D
=-1.5 A,
V
GS
=0 to -10 V
-
-
-
-
-0.7
-0.3
-2.9
-3.2
-
-
-
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15V,
V
GS
=-10 V,
I
D
=-1.5 A,
R
G,ext
=6
W
V
GS
=0 V,
V
DS
=-15 V,
f
=1 MHz
-
-
-
-
-
-
-
221
126
7
5.1
3.9
12.4
2.8
294
168
11
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Rev 2.3
page 3
2013-11-07
BSL314PE
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≤-10
V
1.6
0.5
1.2
0.375
P
tot
[W]
I
D
[A]
0
40
80
120
160
0.8
0.25
0.125
0.4
0
0
0
20
40
60
80
100
120
140
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
1
1 µs
10 µs
100 µs
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
0
10
2
1 ms
0.5
0.2
0.1
Z
thJA
[K/W]
10
-1
10 ms
0.05
I
D
[A]
10
1
0.02
0.01
DC
10
-2
single pulse
10
0
10
-3
10
-4
10
-2
10
-1
10
0
10
1
10
2
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
DS
[V]
t
p
[s]
Rev 2.3
page 4
2013-11-07
BSL314PE
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
8
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
400
3V
7
5V
4.5 V
350
3.3 V
3.5 V
4V
6
10 V
4V
300
5
250
4
R
DS(on)
[mW]
I
D
[A]
200
4.5 V
3
3.5 V
150
5V
2
3.3 V
100
10 V
1
3V
2.8 V
50
0
0
1
2
3
4
5
0
0
1
2
3
4
5
6
7
8
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
6
8
7
5
6
4
5
3
25 °C
g
fs
[S]
5
I
D
[A]
4
3
2
150 °C
2
1
1
0
0
1
2
3
4
0
0
1
2
3
4
5
6
7
8
V
GS
[V]
I
D
[A]
Rev 2.3
page 5
2013-11-07
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