BSO220N03MS G
OptiMOS
™
3 M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
SW
for High Frequency SMPS
• 100% Avalanche tested
• N-channel
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• Excellent gate charge x
R
DS(on)
product (FOM)
• Qualified for consumer level application
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
30
22
27
8.6
A
V
mΩ
PG-DSO-8
Type
BSO220N03MS G
Package
PG-DSO-8
Marking
220N03MS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
10 secs
Continuous drain current
1)
I
D
V
GS
=10 V,
T
A
=25 °C
V
GS
=10 V,
T
A
=90 °C
V
GS
=4.5 V,
T
A
=25 °C
V
GS
=4.5 V,
T
A
=90 °C
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
1)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
I
AS
E
AS
V
GS
P
tot
T
j
,
T
stg
T
A
=25 °C
2.5
T
A
=25 °C
T
A
=25 °C
I
D
=8.6 A,
R
GS
=25
Ω
8.6
5.9
7.7
5.4
60
8.6
8
±20
1.56
-55 ... 150
55/150/56
mJ
V
W
°C
Value
steady state
7.0
4.7
6.1
4.2
A
Unit
Rev.1.1
page 1
2009-11-19
BSO220N03MS G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
R
thJS
minimal footprint,
t
p
≤10
s
minimal footprint,
steady state
6 cm
2
cooling area
1)
,
t
p
≤10
s
6 cm
2
cooling area
1)
,
steady state
Values
typ.
max.
Unit
-
-
35
K/W
R
thJA
-
-
110
-
-
150
-
-
50
-
-
80
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=16 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=7.7 A
V
GS
=10 V,
I
D
=8.6 A
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=8.6 A
30
1
-
-
-
0.1
-
2.1
10
µA
V
-
-
-
-
0.6
9.5
10
10
21.6
18.3
1.3
19
100
100
27
22
2.3
-
Ω
S
nA
mΩ
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
See figure 3 for more detailed information
See figure 13 for more detailed information
2)
3)
Rev.1.1
page 2
2009-11-19
BSO220N03MS G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics4
)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=15 V,
I
D
=8.6 A,
V
GS
=0 to 10 V
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=8.6 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
1.8
1.0
0.9
1.7
3.8
3.0
8
-
-
-
-
5.0
-
10.4
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=4.5 V,
I
D
=8.6 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
600
230
12
5.7
2.8
6.2
3.4
800
310
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
3.3
6.1
4.4
8.1
nC
I
S
I
S,pulse
V
SD
T
A
=25 °C
V
GS
=0 V,
I
F
=8.6 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
-
-
0.88
3
60
1.1
A
V
Reverse recovery charge
4)
Q
rr
-
-
8
nC
See figure 16 for gate charge parameter definition
Rev.1.1
page 3
2009-11-19
BSO220N03MS G
1 Power dissipation
P
tot
=f(T
A
);
t
p
≤10
s
2 Drain current
I
D
=f(T
A
);
t
p
≤10
s
parameter:
V
GS
3
10
2.5
8
2
6
P
tot
[W]
1.5
I
D
[A]
4.5 V
10 V
4
1
0.5
2
0
0
40
80
120
160
0
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C
2)
;
D
=0
parameter:
t
p
10
2
limited by on-state
resistance
10 µs
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
2)
parameter:
D
=t
p
/T
10
2
1 µs
0.5
10
1
100 µs
0.2
1 ms
10
1
0.1
0.05
0.02
0.01
single pulse
10
0
10 ms
100 ms
10 s
Z
thJA
[K/W]
10
0
10
-1
10
2
10
-6
I
D
[A]
10
-1
10
-2
10
-1
10
0
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
t
p
[s]
Rev.1.1
page 4
2009-11-19
BSO220N03MS G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
60
10 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
50
2.8 V
5V
4.5 V
3V
50
40
3.2 V
3.5 V
40
4V
R
DS(on)
[m
Ω
]
30
4V
4.5 V
I
D
[A]
30
20
5V
20
3.5 V
10 V
10
3.2 V
3V
2.8 V
10
0
0
1
2
3
0
0
5
10
15
20
25
30
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
60
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
35
50
30
25
40
20
30
g
fs
[S]
150 °C
25 °C
I
D
[A]
15
20
10
10
5
0
0
1
2
3
4
5
0
0
5
10
15
20
25
30
V
GS
[V]
I
D
[A]
Rev.1.1
page 5
2009-11-19
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