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BSP170P_09

Description
1.9 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size291KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSP170P_09 Overview

1.9 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET

BSP170P_09 Parametric

Parameter NameAttribute value
Number of terminals4
Minimum breakdown voltage60 V
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
Transistor component materialssilicon
Maximum ambient power consumption1.8 W
Channel typeP channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current1.9 A
Rated avalanche energy70 mJ
Maximum drain on-resistance0.3000 ohm
Maximum leakage current pulse7.6 A
BSP 170 P
SIPMOS
®
Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• Pb-free lead finishing; RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
D
-60
0.3
-1.9
V
A
PG-SOT-223
Type
BSP 170 P
Package
PG-SOT-223
Tape and reel information
L6327: 1000pcs/reel
Marking
BSP170
Lead free
Yes
Packing
Non Dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
steady state
Continuous drain current
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=1.9 A,
R
GS
=25
-1.9
-1.5
-7.6
70
0.18
I
D
=1.9 A,
V
DS
=48 V,
di /dt =-200 A/µs,
T
j,max
=150 °C
mJ
A
Unit
Avalanche energy, periodic limited by
E
AR
T
jmax
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
dv /dt
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 (HBM)
T
A
=25 °C
-6
±20
1.8
-55 ... 150
1A (250V to 500V)
260 °C
55/150/56
kV/µs
V
W
°C
Rev 2.52
page 1
2009-02-16
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