BSZ130N03MSG datasheet, PDF - EEWORLD Datasheet

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BSZ130N03MSG: DescriptionThe best? M-Series Power-MOSFET; CategoryDiscrete semiconductor The transistor; File Size326KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSZ130N03MSG Overview

The best? M-Series Power-MOSFET

BSZ130N03MSG Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, S-PDSO-N5
Contacts	8
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	9 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	35 A
Maximum drain current (ID)	9 A
Maximum drain-source on-resistance	0.015 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-PDSO-N5
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	25 W
Maximum pulsed drain current (IDM)	140 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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BSZ130N03MS G

OptiMOS™3

M-Series Power-MOSFET

Features

• Optimized for 5V driver application (Notebook, VGA, POL)

• Low FOM

for High Frequency SMPS

• 100% avalanche tested

• N-channel

• Very low on-resistance

DS(on)

=4.5 V

• Excellent gate charge x

DS(on)

product (FOM)

• Qualified according to JEDEC

for target applications

• Superior thermal resistance

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

BSZ130N03MS G

Package

PG-TSDSON-8

Marking

130N03M

Product Summary

DS(on),max

=10 V

=4.5 V

11.5

PG-TSDSON-8

mΩ

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol Conditions

=10 V,

=25 °C

=10 V,

=100 °C

=4.5 V,

=25 °C

=4.5 V,

=100 °C

=4.5 V,

=25 °C,

thJA

=60 K/W

Pulsed drain current

Avalanche current, single pulse

Avalanche energy, single pulse

Gate source voltage

Value

Unit

140

±20

D,pulse

=25 °C

=20 A,

=25

Ω

J-STD20 and JESD22

Rev. 2.0

page 1

2010-03-23

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