BSZ180P03NS3E G
OptiMOS
TM
P3 Power-Transistor
Features
• single P-Channel in S3O8
• Qualified according JEDEC
1)
for target applications
• 150 °C operating temperature
•
V
GS
=25 V, specially suited for notebook applications
• Pb-free; RoHS compliant
• ESD protected
• applications: battery management, load switching
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
-30
18
-39.6
PG-TSDSON-8
V
mΩ
A
Type
BSZ180P03NS3E G
Package
PG-TSDSON-8
Marking
180P3NE
Lead free
Yes
Halogen free
Yes
Packing
non-dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=70 °C
T
A
=25 °C
2)
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
I
D,pulse
E
AS
V
GS
P
tot
T
A
=25 °C
T
A
=25 °C
2)
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
1)
Value
39.6
32.0
-9.0
-158
48
±25
40
2.1
-55 … 150
Unit
A
T
C
=25 °C
3)
I
D
=-20 A,
R
GS
=25
Ω
mJ
V
W
T
j
,
T
stg
JESD22-A114 HBM
°C
class 2 (> 2 kV)
260
55/150/56
°C
J-STD20 and JESD22
Rev. 2.1
page 1
2009-11-16
BSZ180P03NS3E G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - case
Thermal resistance,
junction - ambient
R
thJC
R
thJA
6 cm
2
cooling area
2)
Values
typ.
max.
Unit
-
-
-
-
3.1
60
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=-250µA
V
GS(th)
V
DS
=V
GS
,
I
D
=-48 µA
V
DS
=-30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=-30 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=-25 V,
V
DS
=0 V
V
GS
=-6 V,
I
D
=-13 A
-30
-3.1
-
-2.5
-
-1.9
V
Zero gate voltage drain current
I
DSS
-
-
-1
µA
-
-
-
-
-
18.4
-100
-10
30.0
µA
mΩ
V
GS
=-10 V,
I
D
=-20 A
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-20 A
-
-
18
13.5
3.1
29
18.0
-
-
Ω
S
2
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
3)
See Fig. 3 for more detailed information
Rev. 2.1
page 2
2009-11-16
BSZ180P03NS3E G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
3)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25 °C
V
GS
=0 V,
I
F
=-20 A,
T
j
=25 °C
V
R
=15 V,
I
F
=|I
S
|,
di
F
/dt =100 A/µs
-
-
-
-
-
-
40
160
-1.1
V
A
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=-15 V,
V
GS
=0 V
V
DD
=-15 V,
I
D
=20 A,
V
GS
=0 to -10 V
-
-
-
-
-
-
-
8
2
4
9
20
5.0
17
12
3
5
13
30
-
26
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15 V,
V
GS
=-
10 V,
I
D
=-20 A,
R
G
=6
Ω
V
GS
=0 V,
V
DS
=-15 V,
f
=1 MHz
-
-
-
-
-
-
-
1480
744
49
11
11
20
3
2220
1116
73.5
17
16.5
30
5
ns
pF
Values
typ.
max.
Unit
Reverse recovery time
t
rr
-
41
-
ns
Reverse recovery charge
Q
rr
-
41
-
nC
Rev. 2.1
page 3
2009-11-16
BSZ180P03NS3E G
1 Power dissipation
P
tot
=f(T
C
);
t
p
≤10
s
2 Drain current
I
D
=f(T
C
); |V
GS
|≥10 V;
t
p
≤10
s
50
48
44
40
40
36
32
30
P
tot
[W]
-I
D
[A]
20
10
0
0
40
80
120
160
28
24
20
16
12
8
4
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C
1)
;
D
=0
parameter:
t
p
1000
4 Max. transient thermal impedance
Z
thJS
=f(t
p
)
parameter:
D
=t
p
/T
10
1
10
1 µs
10
2
100
10 µs
0.5
100 µs
10
0
1
0.2
0.1
0.05
0.02
0.01
single pulse
10 ms
limited by on-state
resistance
DC
10
0
1
Z
thJS
[K/W]
10
-1
0.1
100
10
1
10
1 ms
-I
D
[A]
10
-1
0.1
10
-2
0.01
0.1
1
10
10
-2
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
10
-1
10
0
-V
DS
[V]
10
1
10
2
10
-5
10
-4
10
-3
t
p
[s]
10
-2
10
-1
10
0
10
1
Rev. 2.1
page 4
2009-11-16
BSZ180P03NS3E G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
40
-10 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
40
-4.5 V
35
-5.0 V
30
30
-5.0 V
R
DS(on)
[m
Ω
]
25
-6V
-I
D
[A]
20
-4.5 V
20
15
-10 V
10
-4.2V
10
-4.0 V
5
-3.7 V
-3.5 V
0
0
1
2
0
3
0
10
20
30
40
-V
DS
[V]
-I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
40
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
40
30
-I
D
[A]
20
g
fs
[S]
25 °C
150 °C
20
10
0
0
1
2
3
4
5
6
0
0
10
20
30
40
-V
GS
[V]
-I
D
[A]
Rev. 2.1
page 5
2009-11-16
Microcontroller MCU
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