Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18
| Parameter Name | Attribute value |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknow |
| Configuration | SINGLE |
| Maximum drain-source on-resistance | 100 Ω |
| FET technology | JUNCTION |
| JEDEC-95 code | TO-18 |
| JESD-30 code | O-MBCY-W3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 1.8 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| 2N4393 | 2N4091 | 2N4859A | |
|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 | Small Signal Field-Effect Transistor, N-Channel, Junction FET, TO-18 | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN |
| package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknow | unknow | unknow |
| Maximum drain-source on-resistance | 100 Ω | 30 Ω | 25 Ω |
| FET technology | JUNCTION | JUNCTION | JUNCTION |
| JEDEC-95 code | TO-18 | TO-18 | TO-18 |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| Number of terminals | 3 | 3 | 3 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C |
| Package body material | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 1.8 W | 1.8 W | 0.36 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM |
| Base Number Matches | 1 | 1 | 1 |
| Configuration | SINGLE | - | SINGLE |
| Number of components | 1 | - | 1 |
| transistor applications | SWITCHING | - | SWITCHING |
| Transistor component materials | SILICON | - | SILICON |