BUV28-QR-B datasheet, PDF - EEWORLD Datasheet

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BUV28-QR-B: DescriptionPower Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size17KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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BUV28-QR-B Overview

Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

BUV28-QR-B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	200 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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BUV28

MECHANICAL DATA

Dimensions in mm(inches)

10.2

1.3

4.5

NPN SWITCHING

TRANSISTOR

6.3

3.6 Dia.

15.1

FEATURES

• LOW SATURATION VOLTAGE

18.0

• FAST SWITCHING

• HIGH RELIABILITY

1 2 3

1.3

14.0

APPLICATIONS

0.85

• Switching Regulators

• Solenoid / Relay Drives

0.5

2.54 2.54

DESCRIPTION

High speed transistor suited for low

voltage applications.

TO–220

PIN 1 — Base PIN 2 — Collector PIN 3 — Emitter

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

CBO

CEO

EBO

tot

stg,

Collector – Base Voltage (I

= 0)

Collector – Emitter Voltage (I

= 0)

Emitter – Base Voltage (I

= 0)

Collector Current

Peak Collector Current (t

≤

5 ms)

Base Current

Total Power Dissipation at T

case

≤

25°C

Storage Temperature

Junction Temperature

400V

200V

10A

15A

85W

–65 to +175°C

+175°C

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Document Number 5923

Issue 1

BUV28-QR-B Related Products

	BUV28-QR-B	BUV28-QR-BR3	BUV28R3
Description	Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Is it Rohs certified?	incompatible	conform to	conform to
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Maximum collector current (IC)	10 A	10 A	10 A
Collector-emitter maximum voltage	200 V	200 V	200 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	10	10
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
JESD-609 code	-	e3	e3
Terminal surface	-	TIN	TIN

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