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BSM50GB120DL

Description
Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size241KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSM50GB120DL Overview

Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel,

BSM50GB120DL Parametric

Parameter NameAttribute value
MakerInfineon
package instruction,
Reach Compliance Codecompliant
Maximum collector current (IC)90 A
Collector-emitter maximum voltage1200 V
Gate-emitter maximum voltage20 V
Number of components1
Maximum operating temperature125 °C
Maximum power dissipation(Abs)350 W
VCEsat-Max2.6 V

BSM50GB120DL Related Products

BSM50GB120DL
Description Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel,
Maker Infineon
Reach Compliance Code compliant
Maximum collector current (IC) 90 A
Collector-emitter maximum voltage 1200 V
Gate-emitter maximum voltage 20 V
Number of components 1
Maximum operating temperature 125 °C
Maximum power dissipation(Abs) 350 W
VCEsat-Max 2.6 V
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