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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1657
N-CHANNEL MOSFET
FOR SWITCHING
DESCRIPTION
The 2SK1657 is an N-channel vertical type MOSFET which
can be driven by 2.5 V power supply.
As the MOSFET is low Gate Leakage Current, it is suitable for
filter circuit.
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
0.4
+0.1
–0.05
1.5
0.65
+0.1
–0.15
2
2.9 ±0.2
0.95
FEATURES
• Directly driven by ICs having a 3 V power supply.
• Has low Gate Leakage Current
l
GSS
= ±5 nA MAX. (V
GS
= ±3.0 V)
3
0.4
+0.1
–0.05
0.95
1
0.3
Marking
1.1 to 1.4
0.16
+0.1
–0.06
ORDERING INFORMATION
PART NUMBER
2SK1657
PACKAGE
SC-59 (Mini Mold)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
±7.0
±100
±200
200
150
−55
to +150
V
V
mA
mA
mW
°C
°C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation
Channel Temperature
Storage Temperature
Note
PW
≤
10 ms, Duty Cycle
≤
50%
0 to 0.1
Marking: G19
1. Source
2. Gate
3. Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17806EJ2V0DS00 (2nd edition)
(Previous No. TC-2360)
Date Published November 2005 NS CP(K)
Printed in Japan
1991
stm32/stm8
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