BAR63...
Silicon PIN Diodes
•
PIN diode for high speed
switching of RF signals
•
Very low forward resistance (low insertion loss)
•
Very low capacitance (high isolation)
•
For frequencies up to 3GHz
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
BAR63-02..
BAR63-03W
BAR63-04
BAR63-04W
!
BAR63-05
BAR63-05W
!
BAR63-06
BAR63-06W
!
,
,
,
,
,
,
Type
BAR63-02L
BAR63-02V
BAR63-02W
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
1
Pb-containing
Package
TSLP-2-1
SC79
SCD80
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
Configuration
single, leadless
single
single
single
series
series
common cathode
common cathode
common anode
common anode
L
S
(nH)
0.4
0.6
0.6
1.8
1.8
1.4
1.8
1.4
1.8
1.4
Marking
G
G
GG
G
G4s
G4s
G5s
G5s
G6s
G6s
package may be available upon special request
1
2007-04-19
BAR63...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Total power dissipation
BAR63-02L,
T
S
≤
118°C
BAR63-02V, -02W, BAR63-03W,
T
S
≤
115°C
BAR63-04...BAR63-06,
T
S
≤
55°C
BAR63-04S,
T
S
≤
115°C
BAR63-04W...BAR63-06W,
T
S
≤
105°C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAR63-02L
BAR63-02V, BAR63-02W
BAR63-03W
BAR63-04...BAR63-06
BAR63-04S
BAR63-04W...BAR63-06W
Symbol
R
thJS
Symbol
V
R
I
F
P
tot
Value
50
100
250
250
250
250
250
Unit
V
mA
mW
T
j
T
op
T
stg
150
-55 ... 125
-55 ... 150
°C
Value
≤
125
≤
140
≤
155
≤
380
≤
180
≤
180
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Breakdown voltage
I
(BR)
= 5 µA
Reverse current
V
R
= 35 V
Forward voltage
I
F
= 100 mA
1
For
Unit
max.
-
10
1.2
V
nA
V
typ.
-
-
0.95
V
(BR)
I
R
V
F
50
-
-
calculation of
R
thJA
please refer to the Technical Information
2
2007-04-19
BAR63...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
Diode capacitance
V
R
= 5 V,
f
= 1 MHz
V
R
= 0 V, 100 MHz ... 1.8 GHz
Reverse parallel resistance
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Forward resistance
I
F
= 5 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA, measured at
I
R
= 3 mA,
R
L
= 100
Ω
I-region width
Insertion loss
1)
I
F
= 1 mA,
f
= 1.8 GHz
I
F
= 5 mA,
f
= 1.8 GHz
I
F
= 10 mA,
f
= 1.8 GHz
Isolation
1)
V
R
= 0 V,
f
= 0.9 GHz
V
R
= 0 V,
f
= 1.8 GHz
V
R
= 0 V,
f
= 2.45 GHz
1
BAR63-02L
Unit
max.
pF
typ.
C
T
-
-
R
P
-
-
-
r
f
-
-
1.2
1
75
2
-
-
500
15
5
-
-
-
0.21
0.3
0.3
-
k
Ω
Ω
τ
rr
-
ns
W
I
I
L
-
-
-
-
4.5
0.15
0.11
0.1
-
-
-
-
µm
dB
I
SO
-
-
-
17.9
12.3
10
-
-
-
in series configuration,
Z
= 50
Ω
3
2007-04-19
BAR63...
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= 1MHz - 1.8GHz
Reverse parallel resistance
R
P
=
ƒ
(V
R
)
f
= Parameter
10
3
KOhm
100 MHz
0.5
C
T
pF
0.4
EHD07139
10
2
1 GHz
0.3
R
p
10
1
1.8 GHz
0.2
10
0
0.1
0
0
10
20
V
V
R
30
10
-1
0
5
10
15
20
V
30
V
R
Forward resistance
r
f
=
ƒ
(I
F
)
f
= 100MHz
Forward current
I
F
=
ƒ
(V
F
)
T
A
= Parameter
EHD07138
10
2
r
f
Ω
Ι
F
10
3
mA
10
2
BAR 63...
EHD07171
10
1
10
1
10
0
10
0
10
-1
25 ˚C
40 ˚C
85 ˚C
10
-2
10
-1 -2
10
10
-1
10
0
10
1
mA 10
2
10
-3
0.3
0.5
0.8
1
V
V
F
1.2
Ι
F
4
2007-04-19
BAR63...
Forward current
I
F
=
ƒ
(T
S
)
BAR63-04...BAR63-06
Forward current
I
F
=
ƒ
(T
S
)
BAR63-02V, BAR63-02W
120
120
mA
mA
80
80
I
F
60
I
F
60
40
40
20
20
0
0
90 105 120
°C
0
0
15
30
45
60
75
150
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
Forward current
I
F
=
ƒ
(T
S
)
BAR63-03W
Forward current
I
F
=
ƒ
(T
S
)
BAR63-04W...BAR63-06W
120
120
mA
mA
80
80
I
F
60
I
F
60
40
40
20
20
0
0
90 105 120
°C
0
0
15
30
45
60
75
150
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
5
2007-04-19
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