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PTF10137

Description
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 20244, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size90KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

PTF10137 Overview

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 20244, 3 PIN

PTF10137 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionSMALL OUTLINE, R-CDSO-G2
Contacts3
Manufacturer packaging codeCASE 20244
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDSO-G2
JESD-609 codee3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
PTF 10137
GOLDMOS
®
Field Effect Transistor
12 Watts, 1.0 GHz
Description
The PTF 10137 is a 12–watt
GOLDMOS
FET intended for large sig-
nal amplifier applications to 1.0 GHz. It operates at 60% efficiency
with 18 dB gain. Nitride surface passivation and full gold metalliza-
tion ensure excellent device lifetime and reliability.
Performance at 960 MHz, 28 Volts
- Output Power = 12 Watts
- Efficiency = 60% Typ
- Power Gain = 18 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
100% Lot Traceability
Typical Output Power & Efficiency vs. Input Power
20
80
Efficiency
Output Power (Watts)
x
10
V
DD
= 28 V
I
DQ
= 115 mA
f = 960 MHz
Pˆ‡ƒˆ‡ÃQ‚r…Ã
Efficiency (%)
x
15
60
40
PTF
101
37
5
20
0
0.0
0.2
0.4
0
0.6
Input Power (Watts)
Package 20244
RF Specifications
(Guaranteed)
Characteristic
Common Source Power Gain
(V
DD
= 28 V, P
OUT
= 12 W, I
DQ
= 115 mA, f = 960 MHz)
Output Power at 1 dB Compressed
(V
DD
= 28 V, I
DQ
= 115 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 12 W, I
DQ
= 115 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 12 W, I
DQ
= 115 mA, f = 960 MHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
Y
Min
16.5
12
55
Typ
18
15
60
Max
10:1
Units
dB
Watts
%
e
1
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