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2N5460-E3

Description
Small Signal Field-Effect Transistor, P-Channel, Junction FET
CategoryDiscrete semiconductor    The transistor   
File Size68KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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2N5460-E3 Overview

Small Signal Field-Effect Transistor, P-Channel, Junction FET

2N5460-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
FET technologyJUNCTION
JESD-609 codee3
Humidity sensitivity level1
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.31 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
Base Number Matches1
2N/SST5460 Series
Vishay Siliconix
P-Channel JFETs
2N5460
2N5461
2N5462
PRODUCT SUMMARY
Part Number
2N/SST5460
2N/SST5461
2N/SST5462
SST5460
SST5461
SST5462
V
GS(off)
(V)
0.75 to 6
1 to 7.5
1.8 to 9
V
(BR)GSS
Min (V)
40
40
40
g
fs
Min (mS)
1
1.5
2
I
DSS
Min (mA)
–1
–2
–4
FEATURES
D
D
D
D
High Input Impedance
Very Low Noise
High Gain: A
V
= 80 @ 20
mA
Low Capacitance: 1.2 pF Typical
BENEFITS
D
Low Signal Loss/System Error
D
High System Sensitivity
D
High-Quality Low-Level Signal
Amplification
APPLICATIONS
D
Low-Current, Low-Voltage Amplifiers
D
High-Side Switching
D
Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N/SST5460 series are p-channel JFETs designed to
provide all-around performance in a wide range of amplifier
and analog switch applications.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), plastic packages provide low cost options, and are
available in tape-and-reel for automated assembly, (see
Packaging Information).
TO-226AA
(TO-92)
1
2N5460
2N5461
2N5462
D
1
TO-236
(SOT-23)
SST5460 (B0)*
SST5461 (B1)*
SST5462 (B2)*
*Marking Code for TO-236
S
D
2
3
S
2
G
G
3
Top View
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Lead Temperature (
1
/
16
” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
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