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SPP08N50C3_09

Description
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
File Size726KB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet View All

SPP08N50C3_09 Overview

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

SPP08N50C3, SPI08N50C3
SPA08N50C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
P-TO220-3-31
1
2
3
V
DS
@
T
jmax
R
DS(on)
I
D
PG-TO220FP PG-TO262
560
0.6
7.6
V
A
PG-TO220
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
SPP08N50C3
SPI08N50C3
SPA08N50C3
Package
PG-TO220
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4567
Q67040-S4568
SP000216306
Marking
08N50C3
08N50C3
08N50C3
Maximum Ratings
Parameter
Symbol
I
D
Value
SPP_I
SPA
Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
A
7.6
4.6
7.6
1)
4.6
1)
22.8
230
0.5
7.6
±20
±
30
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=5.5A,
V
DD
=50V
I
D puls
E
AS
E
AR
I
AR
V
GS
V
GS
P
tot
22.8
230
0.5
7.6
±20
±
30
A
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=7.6A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
A
V
W
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
83
32
Operating and storage temperature
Reverse diode dv/dt
6)
Rev. 2.91
Page
1
T
j ,
T
stg
dv/dt
-55...+150
15
°C
V/ns
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