MOSPEC
2.0A GLASS PASSIVATED BRIDGE RECTIFIER
FEATURES
＊Glass
Passivated Die Construction
＊Typical
I
R
less than 0.1uA
＊High
case dielectric strength
＊Ideal
for printed circuit boards
＊High
Surge Current Capability
＊High
temperature soldering guaranteed:
260℃/10 second at 5 lbs (2.3kg) tension.
MECHANICAL DATA
＊Case:
Molded Plastic
＊Epoxy:
UL94V-O rate flame retardant
＊Terminals：Plated
Leads Solderable
Per MIL-STD-750 Method 2026
＊Polarity：As
Marking on Body
＊Mounting
Position: Any
＊Weight：
1.7 gram (approx.)
＊Marking:Type
Number
2KBP005M THRU 2KBP10M
Dim
A
B
C
D
E
G
H
I
J
K
L
KBP
Min
Max
14.22
15.24
10.66
16.68
15.20
---
4.56
5.10
3.60
4.30
2.16
2.54
0.76
0.85
1.52
---
11.68
12.70
12.70
---
O
3.2×45 Typical
Unit :mm
MAXIMUM RATINGS AND ELECTRICAL CHARATERISTICS
* Rating at 25℃ ambient temperature unless otherwise specified
* Single phase,half wave. 60Hz, resistive or inductive load.
* For capacitive load derate current by 20 %
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current
(Note 1)
@ T
A
=55℃
Non-Repetitive Peak Surge Current
8.3 ms Single half sine-wave superimposed on
rated load ( JEDEC Method)
Forward Voltage (per element) ( I
F
=2.0 Amp)
Peak Reverse Current
( Rated DC Voltage, T
C
= 25℃)
( Rated DC Voltage, T
C
= 100℃)
Rating for Fusing( t<8.3 ms)
Typical Junction Capacitance per element (Note2)
Typical Thermal Resistance (note 3)
Operating and Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O(AV)
I
FSM
V
FM
I
R
I
2
t
C
J
R
θ
jA
T
J
, T
stg
2KBP
005M
50
2KBP
01M
100
2KBP
02M
200
2KBP
04M
400
2KBP
06M
600
2KBP
08M
800
2KBP
10M
1000
Unit
V
35
70
140
280
2.0
60
1.1
5.0
500
15
25
30
-65 to +165
420
560
700
V
A
A
V
uA
A
2
s
pF
k/W
℃
Note: 1 Lead maintained at ambient temperature at a distance of 9.5 mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2
3. Thermal resistance junction to ambient, mounted on PC board with 12 mm copper pad.
2KBP005M Thru 2KBP10M
FIG-1 FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT (Amp.)
NSTANTANEOUS FORWARD CURRENT (Amp.)
FIG-2 TYPICAL FORWARD CHARACTERISITICS
T
J
=150 C
T
J
=25 C
O
O
CASE TEMPERATURE (℃)
FORWARD VOLTAGE (Volts)
FIG-3 PEAK FORWARD SURGE CURRENT
T
J
=150 C
Single Half
Sine Wave
(JEDEC Method)
O
FIG-4 TYPICAL JUNCTION CAPACITANCE
T
J
=25 C
f=1MHz
O
FWD SURGE CURRENT (A)
II
FSM
, PEAK
NUMBER OF CYCLES AT 60 Hz
JUNCTION CAPACITANCE (
P
F)
REVERSE VOLTAGE (Volts)
FIG-5 TYPICAL REVERSE CHARACTERISTICS
I
R
, INSTANTANEOUS REVERSE CURRENT (mA)
T
J
=150 C
T
J
=125 C
O
O
O
T
J
=100 C
T
J
=25 C
O
PERCENT OF RATED REVERSE VOLTAGE (﹪)
NXP MCU
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