BSC034N03LSG datasheet, PDF - EEWORLD Datasheet

BSC034N03LSG: Description22 A, 30 V, 0.0051 ohm, N-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size22KB，1 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSC034N03LSG Overview

22 A, 30 V, 0.0051 ohm, N-CHANNEL, Si, POWER, MOSFET

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	GREEN, PLASTIC, TDSON-8
Contacts	8
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	55 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	100 A
Maximum drain current (ID)	22 A
Maximum drain-source on-resistance	0.0051 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-N5
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	57 W
Maximum pulsed drain current (IDM)	400 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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