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BSC037N025SG

Description
The best? Power-Transistor
CategoryDiscrete semiconductor    The transistor   
File Size379KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSC037N025SG Overview

The best? Power-Transistor

BSC037N025SG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-F5
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)350 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)100 A
Maximum drain current (ID)21 A
Maximum drain-source on-resistance0.006 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F5
JESD-609 codee3
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)69 W
Maximum pulsed drain current (IDM)200 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BSC037N025S G
OptiMOS™2
Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC
1
for target applications
• Logic level / N-channel
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• Avalanche rated; dv/dt rated
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSC037N025S G
Package
PG-TDSON-8
Marking
37N025S
Product Summary
V
DS
R
DS(on),max
I
D
25
3.7
100
PG-TDSON-8
V
mΩ
A
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
T
A
=25 °C,
R
thJA
=45 K/W
2)
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=45 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
T
C
=25 °C
3)
I
D
=50 A,
R
GS
=25
I
D
=50 A,
V
DS
=24 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
100
68
21
200
350
6
±20
69
2.8
-55 ... 150
55/150/56
°C
mJ
kV/µs
V
W
Unit
A
Rev. 1.4
page 1
2009-10-22

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