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BSC046N02KSG

Description
19 A, 20 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size433KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BSC046N02KSG Overview

19 A, 20 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET

BSC046N02KSG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-F5
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)151 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)80 A
Maximum drain current (ID)19 A
Maximum drain-source on-resistance0.0046 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F5
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)48 W
Maximum pulsed drain current (IDM)200 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
BSC046N02KS G
OptiMOS™2
Power-Transistor
Features
• For fast switching converters and sync. rectification
• Qualified according to JEDEC for target applications
• Super Logic level 2.5V rated; N-channel
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
•Halogen-free according to IEC61249-2-21
1)
Product Summary
V
DS
R
DS(on),max
I
D
20
4.6
80
PG-TDSON-8
V
mΩ
A
Type
BSC046N02KS G
Package
PG-TDSON-8
Marking
046N02KS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=2.5 V,
T
C
=25 °C
V
GS
=2.5 V,
T
C
=100 °C
V
GS
=4.5 V,
T
A
=25 °C,
R
thJA
=45 K/W
2)
Value
80
50
60
38
19
200
151
6
±12
Unit
A
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1)
I
D,pulse
E
AS
dv /dt
V
GS
T
C
=25 °C
3)
I
D
=50 A,
R
GS
=25
I
D
=50 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
mJ
kV/µs
V
J-STD20 and JESD22
Rev. 1.06
page 1
2010-07-01
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