BSC080N03LSG datasheet, PDF - EEWORLD Datasheet

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BSC080N03LSG: Description14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size383KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSC080N03LSG Overview

14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET

BSC080N03LSG Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-F5
Contacts	8
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	15 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	52 A
Maximum drain current (ID)	14 A
Maximum drain-source on-resistance	0.012 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F5
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	34 W
Maximum pulsed drain current (IDM)	212 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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BSC080N03LS G

OptiMOS™3

Power-MOSFET

Features

• Fast switching MOSFET for SMPS

• Optimized technology for DC/DC converters

• Qualified according to JEDEC

for target applications

• N-channel; Logic level

• Excellent gate charge x

DS(on)

product (FOM)

• Very low on-resistance

DS(on)

• Superior thermal resistance

• Avalanche rated

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

BSC080N03LS G

Package

PG-TDSON-8

Marking

080N03LS

Product Summary

DS(on),max

PG-TDSON-8

mΩ

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol Conditions

=10 V,

=25 °C

=10 V,

=100 °C

=4.5 V,

=25 °C

=4.5 V,

=100 °C

=10 V,

=25 °C,

thJA

=50 K/W

Pulsed drain current

Avalanche current, single pulse

Avalanche energy, single pulse

Reverse diode dv /dt

Gate source voltage

Value

Unit

212

±20

kV/µs

D,pulse

dv /dt

=25 °C

=35 A,

=25

Ω

=50 A,

=24 V,

di /dt =200 A/µs,

j,max

=150 °C

J-STD20 and JESD22

Rev. 1.25

page 1

2009-11-03

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