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28C011TRPFI-15

Description
EEPROM, 128KX8, 150ns, Parallel, CMOS, LDFP-32
Categorystorage    storage   
File Size328KB,19 Pages
ManufacturerData Device Corporation
Download Datasheet Parametric Compare View All

28C011TRPFI-15 Overview

EEPROM, 128KX8, 150ns, Parallel, CMOS, LDFP-32

28C011TRPFI-15 Parametric

Parameter NameAttribute value
package instructionLDFP-32
Reach Compliance Codecompli
ECCN code3A001.A.2.C
Maximum access time150 ns
JESD-30 codeR-XDFP-F32
length20.828 mm
memory density1048576 bi
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Package body materialUNSPECIFIED
encapsulated codeDFP
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height3.6322 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationDUAL
total dose100k Rad(Si) V
width10.414 mm
Maximum write cycle time (tWC)10 ms
Base Number Matches1
1 Megabit (128K x 8-Bit) EEPROM
V
CC
V
SS
RES
OE
CE
WE
RES
I/O Buffer and
Input Latch
Control Logic Timing
High Voltage
Generator
I/O0
I/O7
RDY/Busy
28C011T
28C011T
A0
A6
Address
Buffer and
Latch
A7
A16
Y Decoder
Y Gating
X Decoder
Memory Array
Data Latch
Memory
Logic Diagram
F
EATURES
:
• 128k x 8-bit EEPROM
• R
AD
-P
AK
® radiation-hardened against natural space radia-
tion
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single event effects @ 25
°
C
- SEL
TH
> 120 MeV cm
2
/mg (Device)
- SEU
TH
> 90 MeV cm
2
/mg(Memory Cells)
- SEU
TH
> 18 MeV cm
2
/mg (Write Mode)
- SET
TH
> 40 MeV cm
2
/mg (Read Mode)
• Package:
- 32-pin R
AD
-P
AK
® flat package
- 32-pin Rad-Tolerant flat package
- JEDEC-approved byte-wide pinout
• High speed:
- 120, 150, and 200 ns maximum access times available
• High endurance:
- 10,000 erase/write (in Page Mode),
- 10 year data retention
• Page write mode:
- 1 to 128 bytes
• Low power dissipation
- 20 mW/MHz active (typical)
- 110 µW standby (maximum)
D
ESCRIPTION
:
Maxwell Technologies’ 28C011T high-density 1 Megabit (128K
x 8-Bit) EEPROM microcircuit features a greater than 100
krad (Si) total dose tolerance, depending upon space mission.
The 28C011T is capable of in-system electrical byte and page
programmability. It has a 128-byte page programming function
to make its erase and write operations faster. It also features
data polling and a Ready/Busy signal to indicate the comple-
tion of erase and programming operations. In the 28C010T,
hardware data protection is provided with the RES pin, in addi-
tion to noise protection on the WE signal and write inhibit on
power on and off. Software data protection is implemented
using the JEDEC optional standard algorithm.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
® provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwell’s self-defined Class S.
03.24.15 Rev 14
All data sheets are subject to change without notice
1
(858) 503-3300- Fax: (858) 503-3301 - www.maxwell.com
©2015 Maxwell Technologies
All rights reserved.

28C011TRPFI-15 Related Products

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Description EEPROM, 128KX8, 150ns, Parallel, CMOS, LDFP-32 EEPROM, 128KX8, 120ns, Parallel, CMOS, LDFP-32 EEPROM, 128KX8, 200ns, Parallel, CMOS, LDFP-32 EEPROM, 128KX8, 120ns, Parallel, CMOS, LDFP-32 EEPROM, 128KX8, 200ns, Parallel, CMOS, LDFP-32 EEPROM, 128KX8, 120ns, Parallel, CMOS, LDFP-32 EEPROM, EEPROM, EEPROM, 128KX8, 120ns, Parallel, CMOS, LDFP-32
Reach Compliance Code compli compli compli compli compli compli compli compli compli
package instruction LDFP-32 LDFP-32 LDFP-32 LDFP-32 LDFP-32 LDFP-32 - - LDFP-32
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C - - 3A001.A.2.C
Maximum access time 150 ns 120 ns 200 ns 120 ns 200 ns 120 ns - - 120 ns
JESD-30 code R-XDFP-F32 R-XDFP-F32 R-XDFP-F32 R-XDFP-F32 R-XDFP-F32 R-XDFP-F32 - - R-XDFP-F32
length 20.828 mm 20.828 mm 20.828 mm 20.828 mm 20.828 mm 20.828 mm - - 20.828 mm
memory density 1048576 bi 1048576 bi 1048576 bi 1048576 bi 1048576 bi 1048576 bi - - 1048576 bi
Memory IC Type EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM - - EEPROM
memory width 8 8 8 8 8 8 - - 8
Number of functions 1 1 1 1 1 1 - - 1
Number of terminals 32 32 32 32 32 32 - - 32
word count 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words - - 131072 words
character code 128000 128000 128000 128000 128000 128000 - - 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - - ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C - - 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C - - -55 °C
organize 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8 - - 128KX8
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED - - UNSPECIFIED
encapsulated code DFP DFP DFP DFP DFP DFP - - DFP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - - RECTANGULAR
Package form FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK - - FLATPACK
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL - - PARALLEL
Programming voltage 5 V 5 V 5 V 5 V 5 V 5 V - - 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - - Not Qualified
Maximum seat height 3.6322 mm 2.4384 mm 3.6322 mm 2.4384 mm 2.4384 mm 2.4384 mm - - 2.4384 mm
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V - - 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V - - 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V - - 5 V
surface mount YES YES YES YES YES YES - - YES
technology CMOS CMOS CMOS CMOS CMOS CMOS - - CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY - - MILITARY
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT - - FLAT
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm - - 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL - - DUAL
total dose 100k Rad(Si) V - 100k Rad(Si) V 10k Rad(Si) V 25k Rad(Si) V 25k Rad(Si) V - - 40k Rad(Si) V
width 10.414 mm 10.414 mm 10.414 mm 10.414 mm 10.414 mm 10.414 mm - - 10.414 mm
Maximum write cycle time (tWC) 10 ms 10 ms 10 ms 10 ms 10 ms 10 ms - - 10 ms
Base Number Matches 1 1 1 1 1 1 - - -
Is it Rohs certified? - incompatible incompatible incompatible incompatible incompatible incompatible - incompatible
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