SPP03N60C3_09 datasheet, PDF - EEWORLD Datasheet

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SPP03N60C3_09: Description3.2 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size592KB，14 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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SPP03N60C3_09 Overview

3.2 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

SPP03N60C3_09 Parametric

Parameter Name	Attribute value
Minimum breakdown voltage	600 V
Number of terminals	3
Processing package description	GREEN, PLASTIC, TO-220FP, 3 PIN
each_compli	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	Active
Rated avalanche energy	100 mJ
Shell connection	ISOLATED
structure	SINGLE WITH BUILT-IN DIODE
drain_current_max__abs___id_	2.8 A
Maximum leakage current	3.2 A
Maximum drain on-resistance	1.4 ohm
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
jedec_95_code	TO-220AB
jesd_30_code	R-PSFM-T3
jesd_609_code	e3
moisture_sensitivity_level	NOT SPECIFIED
Number of components	1
operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 Cel
Packaging Materials	PLASTIC/EPOXY
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
eak_reflow_temperature__cel_	NOT SPECIFIED
larity_channel_type	N-CHANNEL
wer_dissipation_max__abs_	29.7 W
Maximum leakage current pulse	9.6 A
qualification_status	COMMERCIAL
sub_category	FET General Purpose Power
surface mount	NO
terminal coating	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
dditional_feature	AVALANCHE RATED

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V

DS

•

G

;-3-111

P-TO220-3-31

T

jmax

Ω

G

FP

G

1

2

3

G

FP

SP000216296

T

C

T

C

t

p

V

DD

T

jmax

T

jmax

V

DD

E

AR

T

jmax

Gate source voltage static

Power dissipation,

T

C

= 25°C

Reverse diode dv/dt

7)

V

GS

V

GS

P

tot

dv/dt

15

V/ns

±

Rev.

3.1

P

2009-11-26

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