BSC100N10NSF G
OptiMOS™2
Power-Transistor
Features
• Very low gate charge for high frequency applications
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
100
10
90
PG-TDSON-8
V
mΩ
A
Type
BSC100N10NSF G
Package
PG-TDSON-8
Marking
100N10NS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=50 A,
R
GS
=25
Ω
Value
90
57
11.4
360
377
±20
156
-55 ... 150
55/150/56
mJ
V
W
°C
Unit
A
Rev. 2.08
page 1
2009-11-03
BSC100N10NSF G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
bottom
top
Thermal resistance,
junction - ambient
R
thJA
minimal footprint
6 cm
2
cooling area
2)
-
-
-
-
-
-
-
-
0.8
18
62
50
K/W
Values
typ.
max.
Unit
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=110 µA
V
DS
=100 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=100 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I
GSS
R
DS(on)
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=50 A
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=25 A
100
2
-
-
3
0.01
-
4
1
µA
V
-
-
-
-
31
10
1
7.7
1.3
61
100
100
10
-
-
nA
mΩ
Ω
S
1)
2)
J-STD20 and JESD22
2
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
see figure 3
Rev. 2.08
page 2
2009-11-03
BSC100N10NSF G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
4)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50 V,
V
GS
=10 V,
I
D
=25 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=50 V,
f
=1 MHz
-
-
-
-
-
-
-
2200
730
22
18
23
26
7
2900
970
-
-
-
-
-
pF
ns
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=50 V,
V
GS
=0 V
V
DD
=50 V,
I
D
=25 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
11
8
13
33
5.1
74
-
-
-
44
-
99
nC
V
nC
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25 °C
V
GS
=0 V,
I
F
=50 A,
T
j
=25 °C
V
R
=50 V,
I
F
=25 A,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-
0.9
88
205
90
360
1.2
-
-
A
V
ns
nC
See figure 16 for gate charge parameter definition
Rev. 2.08
page 3
2009-11-03
BSC100N10NSF G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
160
100
90
80
140
120
70
100
60
P
tot
[W]
80
I
D
[A]
0
40
80
120
160
50
40
30
60
40
20
20
10
0
0
40
80
120
160
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
100 ns
1 µs
10 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
0
0.5
10
2
100 µs
0.2
1 ms
Z
thJC
[K/W]
I
D
[A]
0.1
10
1
DC
10
-1
0.05
0.02
0.01
10
0
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
3
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.08
page 4
2009-11-03
BSC100N10NSF G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
80
7V
10 V
6V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
30
25
60
20
5V
5.5 V
I
D
[A]
5.5 V
R
DS(on)
[m
Ω
]
40
15
6V
7V
10
20
5V
10 V
5
4.5 V
0
0
1
2
3
4
5
0
0
20
40
60
80
100
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
120
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
100
80
80
60
g
fs
[S]
40
40
20
150 °C
25 °C
I
D
[A]
0
0
2
4
6
8
0
0
20
40
60
80
100
V
GS
[V]
I
D
[A]
Rev. 2.08
page 5
2009-11-03
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