Rev. 2.1
BSP296
SIPMOS
Small-Signal-Transistor
Feature
•
N-Channel
•
Enhancement mode
•
Logic Level
•
dv/dt rated
Product Summary
V
DS
100
0.7
1.1
PG-SOT223
4
V
Ω
A
R
DS(on)
I
D
•
Pb-free lead plating; RoHS compliant
Qualified according to AEC Q101
3
2
1
VPS05163
Type
BSP296
BSP296
Package
PG-SOT223
PG-SOT223
Tape and Reel Information
L6433: 4000 pcs/reel
L6327: 1000 pcs/reel
Marking
BSP296
BSP296
Packaging
Non dry
Non dry
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
1.1
0.88
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
4.4
6
±20
1B (>500V, <1000V)
1.79
-55... +150
55/150/56
W
°C
kV/µs
V
Reverse diode dv/dt
I
S
=1.1A,
V
DS
=80V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
ESD (JESD22-A114-HBM)
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j ,
T
stg
Page 1
2009-08-18
Rev. 2.1
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
BSP296
Symbol
min.
R
thJS
R
thJA
-
-
-
Values
typ.
-
max.
25
Unit
K/W
-
-
115
70
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=250µA
Symbol
min.
V
(BR)DSS
Values
typ.
-
1.4
max.
-
1.8
Unit
100
0.8
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=400µA
V
GS(th)
I
DSS
Zero gate voltage drain current
V
DS
=100V,
V
GS
=0,
T
j
=25°C
V
DS
=100V,
V
GS
=0,
T
j
=150°C
µA
-
-
-
-
10
0.62
0.43
0.1
50
100
1
0.7
nA
Ω
Gate-source leakage current
V
GS
=20V,
V
DS
=0
I
GSS
R
DS(on)
R
DS(on)
-
-
-
Drain-source on-state resistance
V
GS
=4.5V,
I
D
=0.95A
Drain-source on-state resistance
V
GS
=10V,
I
D
=1.1A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2009-08-18
Rev. 2.1
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50V,
V
GS
=10V,
I
D
=1.1A,
R
G
=6Ω
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=0.88A
V
GS
=0,
V
DS
=25V,
f=1MHz
BSP296
Symbol
Conditions
min.
0.6
-
-
-
-
-
-
-
Values
typ.
1.2
291
53
29
5.2
7.9
37.4
21.4
max.
-
364
66
36
7.8
11.8
56.1
32.1
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
gs
Q
gd
V
DD
=80V,
I
D
=1.1A
-
-
-
-
0.7
5
13.8
2.7
0.9
7.5
17.2
-
nC
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Q
g
V
DD
=80V,
I
D
=1.1A,
V
GS
=0 to 10V
V
(plateau)
V
DD
=80V,
I
D
= 1.1 A
V
I
S
T
A
=25°C
-
-
-
-
0.82
44.3
71.9
1.1
4.4
1.2
55.4
89.8
A
Inv. diode direct current, pulsed
I
SM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0,
I
F
=
I
S
V
R
=50V,
I
F=
l
S
,
di
F
/dt=100A/µs
-
-
-
V
ns
nC
Page 3
2009-08-18
Rev. 2.1
1 Power dissipation
P
tot
=
f
(
T
A
)
1.9
BSP296
BSP296
2 Drain current
I
D
=
f
(
T
A
)
parameter:
V
GS
≥
10 V
1.3
BSP296
W
1.6
1.4
A
1.1
1
P
tot
0.9
I
D
20
40
60
80
100
120
1.2
1
0.8
0.8
0.7
0.6
0.5
0.6
0.4
0.2
0
0
0.4
0.3
0.2
0.1
°C
160
0
0
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
10
1
BSP296
t
p = 120.0µs
4 Transient thermal impedance
Z
thJA
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
2
BSP296
K/W
A
DS
=
V
/
I
10
1
D
10
DS
(o
n
0
Z
thJA
)
1 ms
10
0
I
D
R
10 ms
10
-1
D = 0.50
0.20
10
-1
10
-2
0.10
0.05
0.02
10
DC
10
-2 0
10
10
1
-3
single pulse
0.01
10
2
V
10
3
10
-4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
Page 4
t
p
2009-08-18
Rev. 2.1
5 Typ. output characteristic
I
D
=
f
(
V
DS
)
parameter:
T
j
= 25 °C,
V
GS
2
BSP296
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
T
j
= 25 °C,
V
GS
2
2.1V
2.5V 2.7V
3.1V
A
R
DS(on)
3.7V
3.9V
4.1V
1.6
4.3V
4.5V
1.4
10V
1.2
1
0.8
0.6
0.4
0.2
0
0
3.1V
Ω
1.4
2.7V
1.1
3.7V
3.9V
4.5V
5V
6V
10V
I
D
2.5V
0.8
2.1V
0.5
0.5
1
1.5
2
V
3
0.2
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
A
2
V
DS
I
D
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
≥
2 x
I
D
x
R
DS(on)max
parameter:
T
j
= 25 °C
2
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter:
T
j
= 25 °C
2
A
S
1.2
g
fs
2.4 2.8 3.2
V
I
D
1.2
0.8
0.8
0.4
0.4
0
0
0.4 0.8 1.2 1.6
2
4
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
A
2
V
GS
Page 5
I
D
2009-08-18
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