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2N4118A(TO-72)

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size778KB,1 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric View All

2N4118A(TO-72) Overview

Transistor

2N4118A(TO-72) Parametric

Parameter NameAttribute value
MakerMicross
package instruction,
Reach Compliance Codecompli
Base Number Matches1
2N4118A
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N4118A
The 2N4118A is an Ultra-High Input Impedance N-Channel JFET
The 2N4118A provides ultra-high input impedance. The
device is specified with a 1-pA limit and typically
operates at 0.2 pA. The part is ideal for use as a high-
impedance sensitive front-end amplifier.
FEATURES  
DIRECT  REPLACEMENT  FOR  SILICONIX  2N4118A  
LOW  POWER  
MINIMUM  CIRCUIT  LOADING  
ABSOLUTE  MAXIMUM  RATINGS    
@  25°C  (unless  otherwise  noted)  
Maximum  Temperatures  
Storage  Temperature  
Operating  Junction  Temperature  
Maximum  Power  Dissipation  
Continuous  Power  Dissipation    
MAXIMUM  CURRENT
Gate  Current  (Note  1)  
MAXIMUM  VOLTAGES  
Gate  to  Drain  or  Gate  to  Source  (Note  2)  
 
I
DSS
<90  µA  
I
GSS
<1  pA  
2N4118A Benefits:
Insignificant Signal Loss / Error Voltage
with High-Impedance Source
Low Power Consumption (Battery)
Maximum Signal Output, Low Noise
High Sensitivity to Low-Level Signals
-­‐65°C  to  +175°C  
-­‐55°C  to  +150°C  
300mW  
50mA  
-­‐40V  
 
2N4118A Applications:
High-Impedance Transducer
Smoke Detector Input
Infrared Detector Amplifier
Precision Test Equipment
 
2N4118A  ELECTRICAL  CHARACTERISTICS  @  25°C  (unless  otherwise  noted)
SYMBOL  
CHARACTERISTIC  
MIN  
TYP.  
MAX  
UNITS  
CONDITIONS  
BV
GSS
 
Gate  to  Source  Breakdown  Voltage  
-­‐40  
-­‐-­‐  
-­‐-­‐  
V  
I
G  
=  -­‐1µA,      V
DS
 =  0V  
V
GS(off)
 
Gate  to  Source  Cutoff  Voltage  
-­‐1  
-­‐-­‐  
-­‐3  
V  
                                   V
DS
 =  10V,      I
D  
=  1nA  
I
DSS
 
Gate  to  Source  Saturation  Current  
0.08  
-­‐-­‐  
0.24  
mA  
V
DS
 =  10V,      V
GS  
=  0V  
I
GSS
 
Gate  Leakage  Current  
-­‐-­‐  
-­‐-­‐  
-­‐1  
pA  
V
GS  
=  -­‐20V,    V
DS
 =  0V  
-­‐-­‐  
-­‐-­‐  
-­‐2.5  
V
GS  
=  -­‐20V,    V
DS
 =  0V,    150°C  
g
fs
 
Forward  Transconductance(Note  3)  
80  
-­‐-­‐  
250  
µmho  
V
DS
 =  10V,      V
GS  
=  0V,      f  =  1kHz  
 
g
os
 
Output  Conductance  
-­‐-­‐  
-­‐-­‐  
5  
C
iss
 
Input  Capacitance  
-­‐-­‐  
-­‐-­‐  
3  
 
 
pF  
V
DS
 =  10V,      V
GS  
=  0V,      f  =  1MHz  
C
rss
 
Reverse  Transfer  Capacitance  
-­‐-­‐  
-­‐-­‐  
1.5  
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
1  .  Absolute  maximum  ratings  are  limiting  values  above  which  2N4118A  serviceability  may  be  impaired.    
NOTES  
2.    Due  to  symmetrical  geometry,  these  units  may  be  operated  with  source  and  drain  leads  interchanged  
3.  This  parameter  is  measured  during  a  2ms  interval  100ms  after  power  is  applied.    (Not  a  JEDEC  condition.)  
Micross Components Europe
Available Packages:
2N4118A in TO-72
2N4118A in bare die.
TO-72 (Bottom View)
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx

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