BSZ050N03MS G
OptiMOS™3
M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
SW
for High Frequency SMPS
• 100% avalanche tested
• N-channel
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• Excellent gate charge x
R
DS(on)
product (FOM)
• Qualified according to JEDEC
1)
for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSZ050N03MS G
Package
PG-TSDSON-8
Marking
050N03M
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
30
4.5
5.7
40
PG-TSDSON-8
A
V
mΩ
Maximum ratings,
at
T
j
=25 ° unless otherwise specified
C,
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °
C
V
GS
=10 V,
T
C
=100 °
C
V
GS
=4.5 V,
T
C
=25 °
C
V
GS
=4.5 V,
T
C
=100 °
C
V
GS
=4.5 V,
T
A
=25 °
C,
R
thJA
=60 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
1)
Value
40
40
40
40
Unit
A
15
160
20
70
±20
mJ
V
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °
C
T
C
=25 °
C
I
D
=20 A,
R
GS
=25
Ω
J-STD20 and JESD22
Rev. 1.7
page 1
2009-11-05
BSZ050N03MS G
Maximum ratings,
at
T
j
=25 ° unless otherwise specified
C,
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °
C
T
A
=25 °
C,
R
thJA
=60 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
48
2.1
-55 ... 150
55/150/56
°
C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R
thJC
R
thJA
6 cm
2
cooling area
2)
-
-
-
-
2.5
60
K/W
Electrical characteristics,
at
T
j
=25 ° unless otherwise specified
C,
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °
C
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °
C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=16 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=20 A
V
GS
=10 V,
I
D
=20 A
Gate resistance
Transconductance
2)
30
1
-
-
-
0.1
-
2
1
V
µA
-
-
-
-
0.7
10
10
4.6
3.8
1.4
75
100
100
5.7
4.5
2.5
-
Ω
S
nA
mΩ
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
38
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
See figure 3 for more detailed information
3)
Rev. 1.7
page 2
2009-11-05
BSZ050N03MS G
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 10 V
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
7.8
4.2
3.8
7.3
17
2.9
34
10
5.6
6.2
11
22
-
46
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=10 V,
I
D
=30 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
2700
800
55
6.7
4.2
26
3.2
3600
1100
-
-
-
-
-
ns
pF
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
14
21
19
28
nC
I
S
T
C
=25 °
C
I
S,pulse
V
SD
V
GS
=0 V,
I
F
=20 A,
T
j
=25 °
C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
-
-
0.83
40
160
1.1
A
V
Reverse recovery charge
4)
5)
Q
rr
-
-
20
nC
See figure 13 for more detailed information
See figure 16 for gate charge parameter definition
Rev. 1.7
page 3
2009-11-05
BSZ050N03MS G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
)
parameter:
V
GS
60
50
50
40
10 V
4.5 V
40
30
P
tot
[W]
30
I
D
[A]
20
10
0
0
40
80
120
160
0
40
80
120
160
20
10
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °
D
=0
C;
parameter:
t
p
10
3
limited by on-state
resistance
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1 µs
10
2
10 µs
0.5
100 µs
1
Z
thJC
[K/W]
DC
0.2
0.1
0.05
I
D
[A]
10
1
1 ms
10 ms
0.1
0.02
0.01
single pulse
10
0
10
-1
10
-1
0.01
10
0
0
0
0
0
0
0
1
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.7
page 4
2009-11-05
BSZ050N03MS G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °
C
parameter:
V
GS
180
10 V
5V
4V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °
C
parameter:
V
GS
10
3V
3.2 V
150
4.5 V
8
120
3.5 V
R
DS(on)
[m
Ω
]
6
4V
4.5 V
5V
6V
I
D
[A]
90
3.5 V
4
10 V
60
3.2 V
30
3V
2.8 V
2
0
0
1
2
3
0
0
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
180
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °
C
160
150
120
120
90
g
fs
[S]
150 °
C
25 °
C
I
D
[A]
80
60
40
30
0
0
1
2
3
4
5
0
0
40
80
120
160
V
GS
[V]
I
D
[A]
Rev. 1.7
page 5
2009-11-05
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