28C010T
1 Megabit (128K x 8-Bit) EEPROM
Memory
Logic Diagram
F
EATURES
:
• 128k x 8-bit EEPROM
• R
AD
-P
AK
® radiation-hardened against natural space radia-
tion
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single event effects @ 25
°
C
- SEL
TH
> 120 MeV cm
2
/mg (Device)
- SEU
TH
> 90 MeV cm
2
/mg(Memory Cells)
- SEU
TH
> 18 MeV cm
2
/mg (Write Mode)
- SET
TH
> 40 MeV cm
2
/mg (Read Mode)
• Package:
- 32 Pin R
AD
-P
AK
® Flat Pack
- 32 Pin R
AD
-P
AK
® D
UAL
I
NLINE
P
ACKAGE
- JEDEC-approved byte-wide pinout
• High speed:
- 120, 150, and 200 ns maximum access times available
• High endurance:
- 10,000 erase/write (in Page Mode),
- 10 year data retention
• Page write mode:
- 1 to 128 bytes
• Automatic programming
- 10 ms automatic page/byte write
• Low power dissipation
- 20 mW/MHz active (typical)
- 110 µW standby (maximum)
• Standard JEDEC package width
D
ESCRIPTION
:
Maxwell Technologies’ 28C010T high-density 1 Megabit
(128K x 8-Bit) EEPROM microcircuit features a greater than
100 krad (Si) total dose tolerance, depending upon space mis-
sion. The 28C010T is capable of in-system electrical byte and
page programmability. It has a 128-byte page programming
function to make its erase and write operations faster. It also
features data polling and a Ready/Busy signal to indicate the
completion of erase and programming operations. In the
28C010T, hardware data protection is provided with the RES
pin, in addition to noise protection on the WE signal and write
inhibit on power on and off. Software data protection is imple-
mented using the JEDEC optional standard algorithm. The
28C010T is designed for high reliability in the most demanding
space applications.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
® provides greater than 100
krad(Si) radiation dose tolerance. This product is available
with screening up to Class S.
07.31.2013 Rev 16
All data sheets are subject to change without notice
1
(858) 503-3300- Fax: (858) 503-3301 - www.maxwell.com
©2013 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
T
ABLE
1. 28C010T P
INOUT
D
ESCRIPTION
P
IN
12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2
13, 14, 15, 17, 18, 19, 20, 21
24
22
29
32
16
1
30
S
YMBOL
A0-A16
I/O0 - I/O7
OE
CE
WE
V
CC
V
SS
RDY/BUSY
RES
D
ESCRIPTION
Address
Data I/O
Output Enable
Chip Enable
Write Enable
Power Supply
Ground
Ready/Busy
Reset
28C010T
T
ABLE
2. 28C010T A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
Supply Voltage (Relative to V
SS
)
Input Voltage (Relative to V
SS
)
Package Weight
S
YMBOL
V
CC
V
IN
RP
RT
RD
Thermal Impedance (RP and RT Packages)
Thermal Impedance (DIP Package)
Operating Temperature Range
Storage Temperature Range
1. V
IN
min = -3.0V for pulse width < 50ns.
F
JC
F
JC
T
OPR
T
STG
-55
-65
M
IN
-0.6
-0.5
1
7.4
2.7
10.9
2.4
2.17
+125
+150
°
C/W
°
C/W
°
C
°
C
Memory
T
YP
M
AX
+7.0
+7.0
U
NITS
V
V
Grams
T
ABLE
3. D
ELTA
L
IMITS1
P
ARAMETER
I
CC1
I
CC2
I
CC3A
V
ARIATION2
±10%
±10%
±10%
I
CC3B
±10%
1. Parameters are measured and recorded as Deltas
per
MIL-STD-883 for Class S Devices
2. Specified in Table 6
07.31.2013 Rev 16
All data sheets are subject to change without notice
2
©2013 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
T
ABLE
4. 28C010T R
ECOMMENDED
O
PERATING
C
ONDITIONS
P
ARAMETER
Supply Voltage
Input Voltage
S
YMBOL
V
CC
V
IL
V
IH
RES_PIN
1. V
IL
min = -1.0V for pulse width < 50 ns
V
H
M
IN
4.5
-0.3
1
2.2
V
CC
-0.5
28C010T
M
AX
5.5
0.8
V
CC
+0.3
V
CC
+1
U
NITS
V
V
T
ABLE
5. 28C010T C
APACITANCE
(T
A
= 25
°
C, f = 1 MHZ)
P
ARAMETER
Input Capacitance: V
IN
= 0V
1
Output Capacitance: V
OUT
= 0V
1
1. Guaranteed by design.
S
YMBOL
C
IN
C
OUT
M
IN
--
--
M
AX
6
12
U
NITS
pF
pF
Memory
T
ABLE
6. 28C010T DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 5V ± 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Input Leakage Current
Output Leakage Current
Standby V
CC
Current
Operating V
CC
Current
T
EST
C
ONDITION
V
CC
= 5.5V, V
IN
= 5.5V
V
CC
= 5.5V, V
OUT
= 5.5V/0.4V
CE = V
CC
CE = V
IH
I
OUT
= 0mA, Duty = 100%,
Cycle = 1µs at V
CC
= 5.5V
I
OUT
= 0mA, Duty = 100%,
Cycle = 150ns at V
CC
= 5.5V
Input Voltage
RES_PIN
Output Voltage
2
I
OL
= 2.1 mA
I
OH
= - 0.4 mA
I
OH
= - 0.1 mA
1. I
LI
for RES = 100uA max.
2. RDY/BSY is an open drain output. Only V
OL
applies to this pin.
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
S
UBGROUPS
1, 2, 3
1, 2, 3
1, 2, 3
S
YMBOL
I
IL
I
LO
I
CC1
I
CC2
I
CC3A
I
CC3B
V
IL
V
IH
V
H
V
OL
V
OH
V
OH
M
IN
--
--
--
--
--
--
--
2.2
V
CC
-0.5
--
2.4
V
CC
-0.3V
M
AX
2
1
2
20
1
15
50
0.8
--
--
0.4
--
V
V
U
NITS
µA
µA
µA
mA
mA
07.31.2013 Rev 16
All data sheets are subject to change without notice
3
©2013 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
T
ABLE
7. 28C010T AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION 1
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
°
C)
P
ARAMETER
Address Access Time
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
Chip Enable Access Time
OE = V
IL
, WE = V
IH
-120
-150
-200
Output Enable Access Time
CE = V
IL
, WE = V
IH
-120
-150
-200
Output Hold to Address Change
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
Output Disable to High-Z
2
CE = V
IL
, WE = V
IH
-120
-150
-200
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
RES to Output Delay
3
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
S
YMBOL
t
ACC
S
UBGROUPS
9, 10, 11
--
--
--
t
CE
9, 10, 11
--
--
--
t
OE
9, 10, 11
0
0
0
t
OH
9, 10, 11
0
0
0
9, 10, 11
t
DF
0
0
0
t
DFR
0
0
0
9, 10, 11
--
--
--
400
450
650
50
50
60
300
350
450
ns
--
--
--
ns
75
75
100
ns
120
150
200
ns
120
150
200
ns
M
IN
M
AX
U
NITS
ns
Memory
t
RR
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
07.31.2013 Rev 16
All data sheets are subject to change without notice
4
©2013 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
T
ABLE
8. 28C010T AC E
LECTRICAL
C
HARACTERISTICS FOR
P
AGE
/B
YTE
E
RASE AND
P
AGE
/B
YTE
W
RITE
O
PERATIONS
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
°
C)
P
ARAMETER
Address Setup Time
-120
-150
-200
Chip Enable to Write Setup Time (WE controlled)
-120
-150
-200
Write Pulse Width
CE controlled
-120
-150
-200
WE controlled
-120
-150
-200
Address Hold Time
-120
-150
-200
Data Setup Time
-120
-150
-200
Data Hold Time
-120
-150
-200
Chip Enable Hold Time (WE controlled)
-120
-150
-2000
Write Enable to Write Setup Time (CE controlled)
-120
-150
-200
Write Enable Hold Time (CE controlled)
-120
-150
-200
S
YMBOL
t
AS
S
UBGROUPS
9, 10, 11
0
0
0
t
CS
9, 10, 11
0
0
0
9, 10, 11
t
CW
200
250
350
t
WP
200
250
350
t
AH
9, 10, 11
150
150
200
t
DS
9, 10, 11
75
100
150
t
DH
9, 10, 11
10
10
10
t
CH
9, 10, 11
0
0
0
t
WS
9, 10, 11
0
0
0
t
WH
9, 10, 11
0
0
0
M
IN 1
28C010T
M
AX
--
--
--
--
--
--
U
NITS
ns
ns
ns
--
--
--
--
--
--
ns
--
--
--
ns
--
--
--
ns
--
--
--
--
--
--
--
--
--
ns
--
--
--
ns
Memory
ns
07.31.2013 Rev 16
All data sheets are subject to change without notice
5
©2013 Maxwell Technologies
All rights reserved.
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