Dual N-Channel JFET
High Frequency Amplifier
CORPORATION
2N5911 / 2N5912
FEATURES
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation
Derate above 25
o
C
TO-99
•
Tight Tracking
•
Low Insertion Loss
•
Good Matching
PIN CONFIGURATION
One Side
367mW
3.0mW/
o
C
Both Sides
500mW
4.0mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
CJ1
C
S2
G1
D2
D1
G2
S1
Package
Hermetic TO-99
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
2N5911-12
X2N5912
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
I
GSS
BV
GSS
V
GS(off)
V
GS
I
G
I
DSS
g
fs
g
fs
g
os
g
oss
C
iss
C
rss
e
n
NF
Gate Reverse Current
Gate Reverse Breakdown Voltage
Gate-Source Cutoff Voltage
Gate-Source Voltage
Gate Operating Current
Saturation Drain Current (Pulsewidth 300µs, duty cycle
≤3%)
Common-Source Forward Transconductance
Common-Source Forward Transconductance (Note 1)
Common-Source Output Conductance
Common-Source Output Conductance (Note 1)
Common-Source Input Capacitance (Note 1)
Common-Source Reverse Transfer Capacitance (Note 1)
Equivalent Short Circuit Input Noise Voltage (Note 1)
Spot Noise Figure (Note 1)
7
5000
5000
-25
-1
-0.3
-5
-4
-100
-100
40
10,000
10,000
100
150
5
1.2
20
1
nV
√
Hz
dB
f = 10kHz
f = 10kHz
R
G
= 100kΩ
V
DG
= 10V, I
D
= 5mA
pF
f = 1MHz
µS
pA
nA
mA
V
DS
= 10V, V
GS
= 0V
f = 1kHz
f = 100MHz
f = 1kHz
f = 100MHz
T
A
= 150
o
C
V
PARAMETER
MIN
MAX
-100
-250
UNITS
pA
nA
I
G
= -1µA, V
DS
= 0
V
DS
= 10V, I
D
= 1nA
V
DG
= 10V, I
D
= 5mA
TEST CONDITIONS
V
GS
= -15V, V
DS
= 0
T
A
= 150
o
C
2N5911 / 2N5912
CORPORATION
ELECTRICAL CHARACTERISTICS
(Continued) (T
A
= 25
o
C unless otherwise specified)
SYMBOL
| I
G1
-I
G2
|
I
DSS1
I
DSS2
| V
GS1
-V
GS2
|
∆
| V
GS1
−
V
GS2
|
∆T
PARAMETER
Differential Gate Current
Saturation Drain Current Ratio
Differential Gate-Source Voltage
Gate-Source Voltage
Differential Drift (Measured at
end points, T
A
and T
B
)
0.95
2N5911
2N5912
UNITS
nA
TEST CONDITIONS
V
DG
= 10V, I
D
= 5mA
T
A
= 125
o
C
MIN MAX MIN MAX
20
1
10
20
20
0.95
1
0.95
0.95
20
1
15
40
µV/
o
C
40
1
V
DG
= 10V, I
D
= 5mA
mV
T
A
= 25
o
C
T
B
= 125
o
C
T
A
= -55
o
C
T
B
= 25
o
C
f = 1kHz
V
DS
= 10V, V
GS
= 0
(Pulsewidth 300µA, duty cycle
≤3%)
g
fs1
g
fs2
Transconductance Ratio
NOTE 1:
For design reference only, not 100% tested.
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