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IPT20Q08-CEB

Description
High current density due to double mesa technology
File Size186KB,4 Pages
ManufacturerIP Semiconductor
Websitehttp://www.ipsemiconductor.com/
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IPT20Q08-CEB Overview

High current density due to double mesa technology

IP Semiconductor Co., Ltd.
High current density due to double mesa technology;
SIPOS and Glass Passivation. IPT20Q08-xx series are
suitable for general purpose AC Switching.
They can be used as an ON/OFF function In application
such as static relays, heating regulation, Induction
motor stating circuits… or for phase Control operation
light dimmers, motor speed Controllers.
IPT20Q08-xxB
MAIN FEATURES
Symbol
I
T(RMS)
V
DRM
/ V
RRM
V
TM
Value
20
800
≤ 1.65
Unit
A
V
V
TO-220B
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
RMS on–state current
(360º conduction angle )
Tj = 25℃
Tj = 25℃
Tc = 70℃
t = 8.3ms
t = 10ms
Symbol
Tstg
Tj
V
DRM
V
RRM
V
DSM
V
RSM
I
T(RMS)
I
TSM
I²t
Repetitive F = 50Hz
Non repetitive
dI / dt
I
GM
P
G(AV)
Value
-40 to +150
-40 to +125
800
800
900
900
20
210
200
200
20
100
8
1
Unit
V
V
A
A
A²s
A/us
A
W
Non repetitive surge peak on–state Current
(full cycle, Tj = 25℃)
I²t Value for fusing
t
p = 10ms
Critical Rate of rise of on-state current
Gate supply : I
G
= 500mA dIG/dt = 1A/us
Peak gate current
Average gate power dissipation
t
p = 20us, Tj = 125
Tj = 125
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
1

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