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25MT060WF

Description
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, MTP, 16 PIN
CategoryDiscrete semiconductor    The transistor   
File Size76KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

25MT060WF Overview

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, MTP, 16 PIN

25MT060WF Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PUFM-X16
Contacts16
Reach Compliance Codeunknow
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Maximum collector current (IC)50 A
Collector-emitter maximum voltage600 V
ConfigurationBRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-PUFM-X16
Humidity sensitivity level1
Number of components4
Number of terminals16
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)900 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Base Number Matches1
Target Data 05/01
25MT060WF
"FULL-BRIDGE" IGBT MTP
Warp Speed IGBT
Features
• Gen. 4 Warp Speed IGBT Technology
• HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
• Very Low Conduction and Switching Losses
• Optional SMT Thermystor Inside
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
High Speed Operation
V
CES
= 600V
V
CE(on) typ.
= 2.2V @
V
GE
= 15V, I
C
= 25A
T
C
= 25°C
Benefits
• Optimized for Welding, UPS and SMPS Applications
• Operating Frequencies > 20 kHz Hard Switching,
>200 kHz Resonant Mode
• Low EMI, requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal Resistance
Absolute Maximum Ratings
Parameters
V
CES
I
C
I
CM
I
LM
I
F
Max
600
@ T
C
= 25°C
@ T
C
= 100°C
50
25
200
200
@ T
C
= 100°C
25
200
± 20
2500
900
400
@ T
C
= 25°C
@ T
C
= 100°C
Units
V
A
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
Peak Switching Current
Diode Continuous Forward Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
I
FM
V
GE
V
ISOL
P
D
V
W
1

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25MT060WF 25MT060WFPBF
Description Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, MTP, 16 PIN Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, MTP, 16 PIN
Is it Rohs certified? incompatible conform to
package instruction FLANGE MOUNT, R-PUFM-X16 FLANGE MOUNT, R-XUFM-X16
Contacts 16 16
Reach Compliance Code unknow compli
Other features UL RECOGNIZED LOW CONDUCTION LOSS
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 50 A 50 A
Collector-emitter maximum voltage 600 V 600 V
Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code R-PUFM-X16 R-XUFM-X16
Number of components 4 4
Number of terminals 16 16
Maximum operating temperature 125 °C 150 °C
Package body material PLASTIC/EPOXY UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 225 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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