SPICE MODEL: 2N7002E
2N7002E
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
NEW PRODUCT
·
·
·
·
·
·
Low On-Resistance: R
DS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Available in Lead Free/RoHS Compliant Version
(Note 2)
E
B
G
TOP VIEW
S
D
G
H
K
J
L
M
C
D
SOT-23
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
A
B
C
D
E
G
H
J
K
L
M
a
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-23
Case Material: UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin
Finish annealed over Alloy 42 leadframe). Please see
Ordering Information, Note 5, on Page 2
Terminal Connections: See Diagram
Marking (See Page 2): K7B
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Pulsed
Continuous
V
GSS
I
D
P
d
R
qJA
T
j
, T
STG
Value
60
60
±20
±40
240
300
417
-55 to +150
Units
V
V
V
mA
mW
°C/W
°C
Characteristic
Drain-Gate Voltage R
GS
£
1.0MW
Gate-Source Voltage
Drain Current
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30376 Rev. 4 - 2
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2N7002E
ã
Diodes Incorporated
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
@ T
C
= 25°C
@ T
C
= 125°C
I
DSS
I
GSS
V
GS(th)
@ T
j
= 25°C
R
DS (ON)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
60
¾
¾
1.0
¾
¾
0.8
80
¾
¾
¾
¾
¾
Typ
70
¾
¾
¾
1.6
2.0
1.0
¾
22
11
2.0
7.0
11
Max
¾
1.0
500
±10
2.5
3
4
¾
¾
50
25
5.0
20
20
Unit
V
µA
nA
V
W
A
mS
pF
pF
pF
ns
ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150W, V
GEN
= 10V,
R
GEN
= 25W
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Test Condition
V
GS
= 0V, I
D
= 10mA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±15V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250mA
V
GS
= 10V, I
D
= 250mA
V
GS
= 4.5V, I
D
= 200mA
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Ordering Information
Device
2N7002E-7
Notes:
(Note 4)
Packaging
SOT-23
Shipping
3000/Tape & Reel
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to part number above.
Example: 2N7002E-7-F.
Marking Information
K7B
Date Code Key
Year
Code
Month
Code
Jan
1
Feb
2
2003
P
March
3
K7B = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
YM
2004
R
Apr
4
2005
S
May
5
Jun
6
Jul
7
2006
T
Aug
8
2007
U
Sep
9
2008
V
Oct
O
Nov
N
2009
W
Dec
D
DS30376 Rev. 4 - 2
2 of 3
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2N7002E
1.0
NE W PRODUCT
0.8
I
D
, DRAIN-SOURCE CURRENT (A)
0.6
5.5V
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.1V
2.0
10V
1.6
T
A
= -55°C
1.2
T
A
= 25°C
5.0V
0.4
0.8
T
A
= 125°C
0.2
0.4
2.1V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
6
7
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
R
DS(ON),
- DRAIN-SOURCE-ON-RESISTANCE (W)
R
DS(ON),
DRAIN-SOURCE-ON-RESISTANCE (W)
5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
Fig. 2 Drain Current vs. Gate-Source Voltage
4
4
3
I
D
= 250mA
3
V
GS
= 4.5V
2
I
D
= 75mA
2
V
GS
= 10V
1
1
0
0
2
4
6
8
10
0
0
0.2
0.4
0.6
0.8
1.0
V
GS
- GATE TO SOURCE VOLTAGE (V)
Fig. 3 On Resistance vs.
Gate to Source Voltage
I
D
, DRAIN CURRENT (A)
Fig. 4 On Resistance vs.
Drain Current
5
350
4
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (
W
)
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
3
V
GS
= 4.5V @ 200mA
2
1
V
GS
= 10V @ 250mA
0
0
-75
-50 -25
0
25
50
75
100 125
150
0
25
50
75
100
125
150
175
200
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance vs. Junction Temperature
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 6, Max Power Dissipation vs
Ambient Temperature
DS30376 Rev. 4 - 2
3 of 3
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2N7002E
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