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2N7002ET/R

Description
TRANSISTOR 385 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, SOT-23, 3 PIN, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size84KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

2N7002ET/R Overview

TRANSISTOR 385 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, SOT-23, 3 PIN, FET General Purpose Small Signal

2N7002ET/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.385 A
Maximum drain-source on-resistance3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)10 pF
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2N7002E
N-channel TrenchMOS FET
Rev. 03 — 28 April 2006
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
s
Logic level threshold compatible
s
Surface-mounted package
s
Very fast switching
s
TrenchMOS technology
1.3 Applications
s
Logic level translator
s
High-speed line driver
1.4 Quick reference data
s
V
DS
60 V
s
R
DSon
3
s
I
D
385 mA
s
P
tot
0.83 W
2. Pinning information
Table 1:
Pin
1
2
3
Pinning
Description
gate (G)
source (S)
drain (D)
1
2
3
D
Simplified outline
Symbol
G
SOT23
mbb076
S
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