2N5114UB thru 2N5116UB
Screening in
reference to
MIL-PRF-19500
available
Available on
commercial
versions
P-CHANNEL J-FET
DESCRIPTION
This low-profile surface mount device is available in military equivalents for high-reliability
applications. Microsemi also offers numerous other products to meet higher and lower power
voltage regulation applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
Surface mount equivalent to JEDEC registered 2N5114 thru 2N5116 series.
Low-profile ceramic surface mount package.
Up-screening in reference to MIL-PRF-19500 is available. (See
part nomenclature.)
RoHS compliant versions available (commercial grade only).
UB Package
Also available in:
APPLICATIONS / BENEFITS
•
•
Low-profile UB package.
Lightweight.
TO-18 package
(leaded)
2N5114 – 2N5116
MAXIMUM RATINGS
@ T
C
= +25
o
C unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Gate-Source Voltage
Drain-Source Voltage
(1)
Drain-Gate Voltage
Gate Current
o (2)
Steady-State Power Dissipation @ T
A
= +25 C
Symbol
T
J
and T
STG
V
GS
V
DS
V
DG
I
G
P
D
Value
-65 to +200
30
30
30
50
0.500
Unit
C
V
V
V
mA
W
o
Notes:
1. Symmetrical geometry allows operation of those units with source / drain leads interchanged.
2. Derate linearly 3.0 mW/°C for T
A
> +25 °C.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0006-1, Rev. 1 (111983)
©2011 Microsemi Corporation
Page 1 of 5
2N5114UB thru 2N5116UB
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Ceramic.
TERMINALS: Gold plating over nickel underplate. RoHS compliant matte/tin available on commercial grade only.
MARKING: Part number, date code, manufacturer’s ID.
TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities.
WEIGHT: < 0.04 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
MX 2N5114
Reliability Level
MQ (reference JAN)
MX (reference JANTX)
MV (reference JANTXV)
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
UB (e3)
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
Surface Mount Package
T4-LDS-0006-1, Rev. 1 (111983)
©2011 Microsemi Corporation
Page 2 of 5
2N5114UB thru 2N5116UB
ELECTRICAL CHARACTERISTICS
@ T
A
= +25
o
C unless otherwise noted.
Parameters / Test Conditions
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= 1.0 μA
Drain-Source “On” State Voltage
V
GS
= 0 V, I
D
= -15 mA
V
GS
= 0 V, I
D
= -7.0 mA
V
GS
= 0 V, I
D
= -3.0 mA
Gate Reverse Current
V
DS
= 0, V
GS
= 20 V
Drain Current Cutoff
V
GS
= 12 V, V
DS
= -15 V
V
GS
= 7.0 V, V
DS
= -15 V
V
GS
= 5.0 V, V
DS
= -15 V
Zero Gate Voltage Drain Current
V
GS
= 0, V
DS
= -18V
V
GS
= 0, V
DS
= -15V
V
GS
= 0, V
DS
= -15V
Gate-Source Cutoff
V
DS
= -15, I
D
= -1.0 nA
V
DS
= -15, I
D
= -1.0 nA
V
DS
= -15, I
D
= -1.0 nA
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Drain-Source “On” State Resistance
V
GS
= 0, I
D
= -1.0 mA
2N5114UB
2N5115UB
2N5116UB
2N5114UB
2N5115UB
2N5116UB
2N5114UB
2N5115UB
2N5116UB
2N5114UB
2N5115UB
2N5116UB
2N5114UB
2N5115UB
2N5116UB
2N5114UB
2N5115UB
2N5116UB
Symbol
V
(BR)GSS
V
DS(on)
Min.
30
Max.
Unit
V
-1.3
-0.8
-0.6
500
-500
-500
-500
-30
-15
-5.0
5.0
3.0
1.0
-90
-60
-25
10
6.0
4.0
V
I
GSS
I
D(off)
pA
pA
I
DSS
mA
V
GS(off)
V
Symbol
Min.
Max.
75
100
175
75
100
175
Unit
r
ds(on)1
Ω
Small-Signal Drain-Source “On” State Resistance
V
GS
= 0, I
D
= 0; f = 1 kHz
r
ds(on)2
Ω
Small-Signal, Common-Source Short-Circuit
Reverse Transfer Capacitance
V
GS
= 12 V, V
DS
= 0
V
GS
= 7.0 V, V
DS
= 0
V
GS
= 5.0 V, V
DS
= 0
2N5114UB
2N5115UB
2N5116UB
C
rss
7.0
pF
Small-Signal, Common-Source Short-Circuit Input Capacitance
V
GS
= 0, V
DS
= -15 V, f = 1.0 MHz
2N5114UB, 2N5115UB
2N5116UB
C
iss
25
27
pF
T4-LDS-0006-1, Rev. 1 (111983)
©2011 Microsemi Corporation
Page 3 of 5
2N5114UB thru 2N5116UB
ELECTRICAL CHARACTERISTICS
@ T
A
= +25
o
C unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Delay Time
2N5114UB
2N5115UB
2N5116UB
2N5114UB
2N5115UB
2N5116UB
2N5114UB
2N5115UB
2N5116UB
Symbol
Td(on)
Min.
Max.
6
10
25
10
20
35
6
8
20
Unit
ηs
Rise Time
tr
ηs
Turn-Off Delay Time
Td(off)
ηs
T4-LDS-0006-1, Rev. 1 (111983)
©2011 Microsemi Corporation
Page 4 of 5
2N5114UB thru 2N5116UB
PACKAGE DIMENSIONS
Dimensions
Symbol
Min
BH
BL
BW
CL
CW
LL1
LL2
.046
.115
.085
inch
Max
.056
.128
.108
.128
.108
.038
.035
millimeters
Min
1.17
2.92
2.16
Max
1.42
3.25
2.74
3.25
2.74
0.97
0.89
LS1
LS2
LW
r
r1
r2
Note
Symbol
Min
.036
.071
0.16
inch
Dimensions
millimeters
Max
.040
.079
0.24
.008
.012
.022
Min
0.91
1.81
0.41
Max
1.02
2.01
0.61
.203
.305
.559
Note
.022
.017
0.56
0.43
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas (tungsten with gold plating 60 micro inches minimum over 80
micro inches minimum nickel).
4. Pad 1 = drain, Pad 2 = source, Pad 3 = gate, Pad 4 = shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
T4-LDS-0006-1, Rev. 1 (111983)
©2011 Microsemi Corporation
Page 5 of 5
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