28C010TRPFB-20 datasheet, PDF - EEWORLD Datasheet

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28C010TRPFB-20: DescriptionEEPROM, 128KX8, 200ns, Parallel, CMOS, DFP-32; Categorystorage storage; File Size451KB，20 Pages; ManufacturerData Device Corporation

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28C010TRPFB-20 Overview

EEPROM, 128KX8, 200ns, Parallel, CMOS, DFP-32

28C010TRPFB-20 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Data Device Corporation
package instruction	DFP-32
Reach Compliance Code	compli
ECCN code	3A001.A.2.C
Maximum access time	200 ns
JESD-30 code	R-XDFP-F32
JESD-609 code	e0
length	20.828 mm
memory density	1048576 bi
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Package body material	UNSPECIFIED
encapsulated code	DFP
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	3.7338 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
total dose	100k Rad(Si) V
width	12.192 mm
Maximum write cycle time (tWC)	10 ms
Base Number Matches	1

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28C010T

1 Megabit (128K x 8-Bit) EEPROM

Memory

Logic Diagram

EATURES

• 128k x 8-bit EEPROM

• R

-P

® radiation-hardened against natural space radia-

tion

• Total dose hardness:

- > 100 krad (Si), depending upon space mission

• Excellent Single event effects @ 25

- SEL

> 120 MeV cm

/mg (Device)

- SEU

> 90 MeV cm

/mg(Memory Cells)

- SEU

> 18 MeV cm

/mg (Write Mode)

- SET

> 40 MeV cm

/mg (Read Mode)

• Package:

- 32 Pin R

-P

® Flat Pack

- 32 Pin R

-P

® D

UAL

NLINE

ACKAGE

- JEDEC-approved byte-wide pinout

• High speed:

- 120, 150, and 200 ns maximum access times available

• High endurance:

- 10,000 erase/write (in Page Mode),

- 10 year data retention

• Page write mode:

- 1 to 128 bytes

• Automatic programming

- 10 ms automatic page/byte write

• Low power dissipation

- 20 mW/MHz active (typical)

- 110 µW standby (maximum)

• Standard JEDEC package width

ESCRIPTION

Maxwell Technologies’ 28C010T high-density 1 Megabit

(128K x 8-Bit) EEPROM microcircuit features a greater than

100 krad (Si) total dose tolerance, depending upon space mis-

sion. The 28C010T is capable of in-system electrical byte and

page programmability. It has a 128-byte page programming

function to make its erase and write operations faster. It also

features data polling and a Ready/Busy signal to indicate the

completion of erase and programming operations. In the

28C010T, hardware data protection is provided with the RES

pin, in addition to noise protection on the WE signal and write

inhibit on power on and off. Software data protection is imple-

mented using the JEDEC optional standard algorithm. The

28C010T is designed for high reliability in the most demanding

space applications.

Maxwell Technologies' patented R

-P

® packaging technol-

ogy incorporates radiation shielding in the microcircuit pack-

age. It eliminates the need for box shielding while providing

the required radiation shielding for a lifetime in orbit or space

mission. In a GEO orbit, R

-P

® provides greater than 100

krad(Si) radiation dose tolerance. This product is available

with screening up to Class S.

07.31.2013 Rev 16

All data sheets are subject to change without notice

(858) 503-3300- Fax: (858) 503-3301 - www.maxwell.com

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