PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Wideband RF LDMOS Integrated Power Amplifier
45 W, 1900 – 2200 MHz
Description
The PTMA210452EL and PTMA210452FL are wideband, 45-watt,
2-stage, LDMOS integrated amplifiers intended for use in all typical
modulation formats from 1900 to 2200 MHz. These devices are offered
in thermally-enhanced ceramic packages with solder-friendly plating
for cool and reliable operation.
PTMA210452EL
Package H-33265-8
PTMA210452FL
Package H-34265-8
Broadband Performance
V
DD
= 28 V, I
DQ1
= 200 mA, I
DQ1
= 400 mA,
fixture tuned for 2110 – 2140 MHz
35
30
25
0
Features
•
•
-5
Designed for wide RF and modulation bandwidths
and low memory effects
Typical two-carrier WCDMA performance at
2140 MHz, 28 V
- Average output power = 3.2 W
- Linear Gain = 28 dB
- Efficiency = 10.5%
- IMD3 = –47 dBc
Typical two-tone performance, 2140 MHz, 28 V
- Output power (PEP) = 45 W at IM3 = –30 dBc
- Efficiency = 32%
Capable of handling 10:1 VSWR @ 28 V, 45 W
(CW) output power
Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
Thermally-enhanced packages, Pb-free and
RoHS compliant, with solder-friendly plating
Gain
20
15
10
5
-15
-20
-25
Return Loss (dB)
-10
Gain (dB)
•
•
•
•
Return Loss
-30
0
-35
1700 1800 1900 2000 2100 2200 2300 2400 2500
Frequency (MHz)
RF Characteristics
Two-carrier WCDMA Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ1
= 200 mA (tuned for linearity), I
DQ2
= 450 mA (tuned for linearity & efficiency), P
OUT
= 3.2 W average,
ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Input Return Loss
Gain
Drain Efficiency
Intermodulation Distortion, 2-channel WCDMA
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
IRL
G
ps
Min
—
26.5
9
–43
Typ
–16
28
10.5
–47
Max
–10
—
—
—
Unit
dB
dB
%
dBc
η
D
IMD
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 06, 2009-09-01
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
RF Characteristics
Small-signal CW Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ1
= 200 mA, I
DQ2
= 450 mA, P
OUT
= 1 W, ƒ = 2140 MHz
Characteristic
Gain Flatness
Phase Linearity
Group Delay
Conditions
1 W / 30 MHz
Symbol
∆G
—
Min
—
–1
—
Typ
0.10
+0.6
2.16
Max
0.5
+1
—
Unit
dB
º/60 MHz
ns
ƒ = 2140 MHz
td
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)1
R
DS(on)2
Min
65
—
—
—
—
2.0
—
Typ
—
—
—
3.5
0.56
2.5
—
Max
—
1.0
10.0
—
—
3.0
1.0
Unit
V
µA
µA
Ω
Ω
V
µA
Final Stage On-state Resistance
V
GS
= 10 V, V
DS
= 0.1 V
Operating Gate Voltage
Gate Leakage Current
V
DS
= 28 V, I
DQ1
= 200 mA,
I
DQ2
= 450 mA
V
GS
= 10 V, V
DS
= 0 V
V
GS
I
GSS
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Input Power
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C) Stage 1
Stage 2
T
STG
R
θJC
R
θJC
Symbol
V
DSS
V
GS
T
J
P
IN
P
D
Value
65
–0.5 to +12
200
25
135
0.8
–40 to +150
3.5
1.3
Unit
V
V
°C
dBm
W
W/°C
°C
°C/W
°C/W
Data Sheet
2 of 11
Rev. 06, 2009-09-01
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
PTMA210452EL
PTMA210452FL
V1
V1
Package Outline
H-33265-8
H-34265-8
Package Description
Thermally-enhanced slotted flange
Thermally-enhanced earless flange
Shipping
Tray
Tray
Marking
PTMA210452EL
PTMA210452FL
Typical Performance
(data taken in a production test fixture)
CW Performance
V
DD
= 28 V, I
DQ1
= 200 mA, I
DQ2
= 400 mA
Two-tone at Selected Frequencies
V
DD
= 28 V, I
DQ1
= 200 mA, I
DQ2
= 430 mA
40
35
60
50
45
-20
ƒ = 2110 MHz
ƒ = 2140 MHz
ƒ = 2170 MHz
-25
-30
-35
-40
Power Added Efficiency (%)
40
35
30
25
20
15
10
30
32
34
36
38
40
42
44
46
48
30
25
20
15
10
5
0
30
Efficiency
20
ƒ = 2110 MHz
ƒ = 2140 MHz
ƒ = 2170 MHz
10
0
IMD3
-45
-50
Efficiency
33
36
39
42
45
-55
-60
Output Power (dBm)
Output Power, avg. (dBm)
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 06, 2009-09-01
IMD3 (dBc)
Gain (dB)
30
Gain
40
PAE (%)
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
6-Carrier TD-CDMA Modulation Spectrum
Performance
-30
IS-95 at Selected Frequencies
V
DD
= 28 V, I
DQ1
= 200 mA, I
DQ2
= 430 mA
V
DD
= 28 V, I
DQ1
= 280 mA, I
DQ2
= 390 mA,
ƒ = 2017.5 MHz
Modulation Spectrum (dBc)
-40
-35
15
Drain Efficiency (%)
Efficiency
ACPR (dBc)
-45
-50
-55
-60
-65
28
ƒ = 2110 MHz
ƒ = 2140 MHz
ƒ = 2170 MHz
Efficiency
20
15
10
5
-40
10
-45
1.6 MHz
3.2 kHz
5
ACPR
0
30
32
34
36
38
40
42
-50
27
29
31
33
35
37
39
0
Output Power (dBm)
Output Power (dBm)
WCDMA at Selected Frequencies
V
DD
= 28 V, I
DQ1
= 200 mA, I
DQ2
= 430 mA,
TM 1, 64 channel, 67% clipping
-25
-30
ƒ = 2110 MHz
ƒ = 2140 MHz
ƒ = 2170 MHz
25
30
Two-carrier WCDMA Performance
V
DD
= 28 V, I
DQ1
= 200 mA, I
DQ2
= 430 mA, ƒ =
2110 MHz, PAR = 8.5 dB, 10 MHz spacing
-25
ƒ = 2110 MHz
ƒ = 2140 MHz
ƒ = 2170 MHz
Power Added Efficiency (%)
Efficiency
20
15
25
20
Efficiency
-30
ACPR (dBc)
-40
15
10
5
0
26
30
34
38
42
-40
-45
ACPR
-45
-50
-55
28
30
32
34
36
38
40
42
10
5
0
IMD3
-50
-55
Output Power (dBm)
Output Power, avg. (dBm)
Data Sheet
4 of 11
Rev. 06, 2009-09-01
IMD3 (dBc)
-35
-35
PAE (%)
Power Added Efficiency (%)
20
-35
25
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