SGP15N120
SGW15N120
Fast IGBT in NPT-technology
•
40% lower
E
off
compared to previous generation
•
Short circuit withstand time – 10
µs
•
Designed for:
- Motor controls
- Inverter
- SMPS
•
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
1
C
G
E
PG-TO-220-3-1
PG-TO-247-3
•
Qualified according to JEDEC for target applications
•
Pb-free lead plating; RoHS compliant
•
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
SGP15N120
SGW15N120
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150°C
Gate-emitter voltage
Avalanche energy, single pulse
I
C
= 15A,
V
CC
= 50V,
R
GE
= 25Ω, start at
T
j
= 25°C
Short circuit withstand time
2
V
GE
= 15V, 100V≤
V
CC
≤1200V,
T
j
≤
150°C
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
T
j
,
T
stg
-
-55...+150
260
°C
P
tot
198
W
t
SC
10
µs
V
GE
E
AS
±20
85
V
mJ
I
Cpuls
-
Symbol
V
CE
I
C
30
15
52
52
Value
1200
Unit
V
A
V
CE
1200V
1200V
I
C
15A
15A
E
off
1.5mJ
1.5mJ
T
j
150°C
150°C
Marking
GP15N120
Package
PG-TO-220-3-1
SGW15N120 PG-TO-247-3
1
2
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.6
Nov. 09
Power Semiconductors
SGP15N120
SGW15N120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
thJA
PG-TO-220-3-1
PG-TO-247-3
62
40
R
thJC
0.63
K/W
Symbol
Conditions
Max. Value
Unit
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V,
I
C
= 10 00
µA
V
CE(sat)
V
G E
= 15V,
I
C
= 15A
T
j
= 25° C
T
j
= 15 0° C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 60 0µA,
V
C E
=V
G E
V
C E
=1200V,V
G E
=0V
T
j
= 25° C
T
j
= 15 0° C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
Symbol
Conditions
Value
min.
1200
typ.
-
max.
-
Unit
V
2.5
-
3
-
-
-
3.1
3.7
4
-
-
-
11
3.6
4.3
5
µA
200
800
100
-
1500
120
80
175
-
-
nC
nH
A
nA
S
pF
I
GES
g
fs
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
=0V,V
GE
=20V
V
C E
= 20V,
I
C
= 15A
V
C E
= 25V,
V
G E
= 0V,
f=
1 M Hz
V
C C
= 9 60V,
I
C
= 15A
V
G E
= 1 5V
PG -TO -220-3-1
PG -TO -247-3
V
G E
= 1 5V,t
S C
≤5µs
100V
≤
V
C C
≤1200V,
T
j
≤
150° C
-
-
-
-
-
-
1250
100
65
130
7
13
145
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.6
Nov. 09
Power Semiconductors
SGP15N120
SGW15N120
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 25° C,
V
C C
= 8 00V,
I
C
= 15A,
V
G E
= 1 5V/ 0 V,
R
G
= 3 3Ω ,
L
σ
1 )
= 180nH,
1)
C
σ
= 4 0 pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
18
23
580
22
1.1
0.8
1.9
24
30
750
29
1.5
1.1
2.6
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 15 0° C
V
C C
= 8 00V,
I
C
= 15A,
V
G E
= 1 5V/ 0 V,
R
G
= 3 3Ω ,
L
σ
1 )
= 180nH,
1)
C
σ
= 4 0 pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
38
30
652
31
1.9
1.5
3.4
46
36
780
37
2.3
2.0
4.3
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
1)
Leakage inductance L
σ
and stray capacity C
σ
due to dynamic test circuit in figure E.
Power Semiconductors
3
Rev. 2.6
Nov. 09
SGP15N120
SGW15N120
70A
60A
50A
40A
30A
20A
10A
0A
10Hz
T
C
=110°C
I
c
100A
t
p
=2
µ
s
15
µ
s
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
10A
50
µ
s
T
C
=80°C
200
µ
s
1A
1ms
I
c
DC
0.1A
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 33Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤
150°C)
35A
200W
30A
175W
150W
125W
100W
75W
50W
25W
0W
25°C
25A
20A
15A
10A
5A
0A
25°C
50°C
75°C
100°C
125°C
I
C
,
COLLECTOR CURRENT
P
tot
,
POWER DISSIPATION
50°C
75°C
100°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
Power Semiconductors
4
Rev. 2.6
Nov. 09
SGP15N120
SGW15N120
50A
50A
40A
40A
I
C
,
COLLECTOR CURRENT
30A
15V
13V
11V
9V
7V
I
C
,
COLLECTOR CURRENT
V
G E
=17V
V
G E
=17V
30A
15V
13V
11V
20A
9V
7V
10A
20A
10A
0A
0V
1V
2V
3V
4V
5V
6V
7V
0A
0V
1V
2V
3V
4V
5V
6V
7V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T
j
= 150°C)
V
CE(sat)
,
COLLECTOR
-
EMITTER SATURATION VOLTAGE
50A
6V
40A
5V
I
C
=30A
I
C
,
COLLECTOR CURRENT
4V
I
C
=15A
30A
T
J
=+150°C
20A
T
J
=+25°C
T
J
=-40°C
10A
3V
2V
I
C
=7.5A
1V
0A
3V
5V
7V
9V
11V
0V
-50°C
0°C
50°C
100°C
150°C
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V
CE
= 20V)
T
j
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
Power Semiconductors
5
Rev. 2.6
Nov. 09
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