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IRFD9123

Description
800mA, 80V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size838KB,6 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
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IRFD9123 Overview

800mA, 80V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

IRFD9123 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerRochester Electronics
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (ID)0.8 A
Maximum drain-source on-resistance0.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDIP-T3
JESD-609 codee0
Humidity sensitivity levelNOT SPECIFIED
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Certification statusCOMMERCIAL
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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IRFD9123 Related Products

IRFD9123 IRFD9120
Description 800mA, 80V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker Rochester Electronics Rochester Electronics
Reach Compliance Code unknown unknown
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 80 V 100 V
Maximum drain current (ID) 0.8 A 1 A
Maximum drain-source on-resistance 0.8 Ω 0.6 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDIP-T3 R-PDIP-T4
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL
Certification status COMMERCIAL Not Qualified
surface mount NO NO
Terminal surface TIN LEAD Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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Index Files: 24  1129  1698  1284  2255  1  23  35  26  46 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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