2N4857LEADFREE datasheet, PDF - EEWORLD Datasheet

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2N4857LEADFREE: DescriptionSmall Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18,; CategoryDiscrete semiconductor The transistor; File Size531KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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2N4857LEADFREE Overview

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18,

2N4857LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compli
Configuration	SINGLE
Maximum drain-source on-resistance	40 Ω
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	8 pF
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2N4857

2N4857A

N-CHANNEL

SILICON JFET

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N4857 and

2N4857A are N-Channel silicon JFETs designed for

analog switching and chopper applications.

MARKING: FULL PART NUMBER

TO-18 CASE

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Reverse Gate-Source Voltage

Forward Gate Current

Power Dissipation (TA=25°C)

Operating and Storage Junction Temperature

ELECTRICAL

SYMBOL

IGSS

IDSS

ID(OFF)

BVGSS

VGS(OFF)

VDS(ON)

rDS(ON)

Crss

Ciss

toff

SYMBOL

VDS

VDG

VGSR

IGF

TJ, Tstg

UNITS

°C

360

-65 to +200

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VGS=20V, VDS=0

VGS=20V, VDS=0, TA=150°C

VDS=15V, VGS=0

VDS=15V, VGS=10V

VDS=15V, VGS=10V, TA=150°C

IG=1.0μA, VDS=0

VDS=15V, ID=0.5nA

ID=10mA, VGS=0

VGS=0, ID=0, f=1.0kHz

VGS=10V, VDS=0, f=1.0MHz (2N4857)

VGS=10V, VDS=0, f=1.0MHz (2N4857A)

VGS=10V, VDS=0, f=1.0MHz (2N4857)

VGS=10V, VDS=0, f=1.0MHz (2N4857A)

VDD=10V, VGS(OFF)=6.0V, ID=10mA

VDD=10V, VGS(OFF)=6.0V, ID=10mA (2N4857)

VDD=10V, VGS(OFF)=6.0V, ID=10mA (2N4857A)

MAX

0.25

0.5

100

0.25

0.5

UNITS

μA

2.0

6.0

0.5

8.0

3.5

6.0

4.0

R0 (11-June 2012)

2N4857LEADFREE Related Products

	2N4857LEADFREE	2N4857ALEADFREE
Description	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18,	Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-18,
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compli	compli
Configuration	SINGLE	SINGLE
Maximum drain-source on-resistance	40 Ω	40 Ω
FET technology	JUNCTION	JUNCTION
Maximum feedback capacitance (Crss)	8 pF	3.5 pF
JEDEC-95 code	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	MATTE TIN (315)	Matte Tin (Sn)
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	10	10
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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