PTMA210152M datasheet, PDF - EEWORLD Datasheet

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PTMA210152M: DescriptionWideband RF LDMOS Integrated Power Amplifier 15 W, 1800 鈥?2200 MHz; CategoryWireless rf/communication Radio frequency and microwave; File Size242KB，15 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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PTMA210152M Overview

Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 鈥?2200 MHz

PTMA210152M Parametric

Parameter Name	Attribute value
Maker	Infineon
package instruction	15.90 X 11 MM, 3.35 MM HEIGHT, GREEN, PLASTIC, MO-166, 20 PIN
Reach Compliance Code	compli
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	27.5 dB
Maximum input power (CW)	15 dBm
JESD-609 code	e3
Maximum operating frequency	2200 MHz
Minimum operating frequency	1800 MHz
RF/Microwave Device Types	NARROW BAND HIGH POWER
Terminal surface	MATTE TIN
Maximum voltage standing wave ratio	10

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PTMA210152M

Confidential, Limited Internal Distribution

Wideband RF LDMOS Integrated Power Amplifier

15 W, 1800 – 2200 MHz

Description

The PTMA210152M is a wideband, matched, 15-watt, 2-stage

LDMOS integrated amplifier intended for wideband driver

applications in the 1800 to 2200 MHz band. This device is offered in

a 20-lead thermally-enhanced overmolded package for cool and

reliable operation.

PTMA210152M

Package PG-DSO-20-63

Broadband Performance

= 28 V, I

DQ1

= 80 mA, I

DQ1

= 160 mA

Fixture Tuned For 2110 - 2170 MHz

-5

-10

Features

•

Designed for wide RF bandwidth and low memory

effects

Broadband input on-chip matching

Typical two-carrier WCDMA performance at

2140 MHz, 28 V, 7 W avg.

- Gain = 28.5 dB

- Efficiency = 33 %

- IMD3 = –32 dBc

Typical CW performance at 2140 MHz, 28 V

- Output power at P–1dB ~ 20 W

- Efficiency > 49%

Integrated ESD protection. Meets HBM Class 1B

(minimum), per JESD22-A114F

Capable of handling 10:1 VSWR @ 28 V,

15 W (CW) output power

Thermally-enhanced RoHS-compliant package

1500

1700

1900

2100

2300

Return Loss (dB)

Gain

Gain (dB)

•

Return Loss

-15

-20

-25

-30

2500

•

Frequency (MHz)

RF Characteristics

Two-carrier WCDMA Measurements

(not subject to production test—verified by design/characterization in Infineon test

fixture)

= 28 V, I

DQ1

= 80 mA, I

DQ2

= 160 mA, ƒ = 2110 – 2170 MHz, P

OUT

= 7 W average

Characteristic

Gain

Power Added Efficiency

Input Return Loss

Adjacent Channel Power Ratio

Intermodulation Distortion

OUT

Conditions

Symbol

Min

—

Typ

28.5

–14

–36

–32

Max

—

Unit

dBc

IRL

ACPR

IMD3

table continued next page

All published data at T

CASE

= 25°C unless otherwise indicated

ESD:

Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet

1 of 15

Rev. 04, 2010-04-16

*See Infineon distributor for future availability.

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