TN0201L-18 datasheet, PDF - EEWORLD Datasheet

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TN0201L-18: DescriptionSmall Signal Field-Effect Transistor, 0.64A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA; CategoryDiscrete semiconductor The transistor; File Size134KB，4 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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TN0201L-18 Overview

Small Signal Field-Effect Transistor, 0.64A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

TN0201L-18 Parametric

Parameter Name	Attribute value
Maker	Vishay
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	0.64 A
Maximum drain-source on-resistance	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	15 pF
JEDEC-95 code	TO-226AA
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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TN0201L-18 Related Products

	TN0201L-18	TN0401L-18	VN0300L-18
Description	Small Signal Field-Effect Transistor, 0.64A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA	Small Signal Field-Effect Transistor, 0.64A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA	Small Signal Field-Effect Transistor, 0.64A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V	40 V	30 V
Maximum drain current (ID)	0.64 A	0.64 A	0.64 A
Maximum drain-source on-resistance	1.2 Ω	1.2 Ω	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	15 pF	15 pF	25 pF
JEDEC-95 code	TO-226AA	TO-226AA	TO-226AA
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maker	Vishay	-	Vishay

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